Wafer scale co-integration of the EICs to the PICs using the adhesion bonding technique can open up new opportunities for improved performance, power efficiency and manufacturability. Benzocyclobutene (BCB) polymer is an appropriate candidate for the bonding material owing to its adhesion quality, low dielectric constant and compatibility with Si and InP industries. In this paper, we present a low resistance metal interconnection technique in the wafer scale for carrying the high speed RF signals. The design concept is supported by measurements.
|Titel||Proceedings of the 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter, November 27-28, 2017, Delft, Netherlands|
|Status||Gepubliceerd - 2017|
|Evenement||22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Delft, Nederland|
Duur: 27 nov 2017 → 28 nov 2017
|Congres||22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter|
|Periode||27/11/17 → 28/11/17|
Meighan, A., Wale, M. J., de Vries, T., Smalbrugge, E., & Williams, K. A. (2017). Low resistance metal interconnection for direct wafer bonding of electronic to photonic ICs. In Proceedings of the 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter, November 27-28, 2017, Delft, Netherlands (blz. 1-4)