Low resistance metal interconnection for direct wafer bonding of electronic to photonic ICs

A. Meighan, M.J. Wale, T. de Vries, E. Smalbrugge, K.A. Williams

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Samenvatting

Wafer scale co-integration of the EICs to the PICs using the adhesion bonding technique can open up new opportunities for improved performance, power efficiency and manufacturability. Benzocyclobutene (BCB) polymer is an appropriate candidate for the bonding material owing to its adhesion quality, low dielectric constant and compatibility with Si and InP industries. In this paper, we present a low resistance metal interconnection technique in the wafer scale for carrying the high speed RF signals. The design concept is supported by measurements.
Originele taal-2Engels
TitelProceedings of the 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter, November 27-28, 2017, Delft, Netherlands
Pagina's1-4
StatusGepubliceerd - 2017
Evenement22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter - Delft, Nederland
Duur: 27 nov 201728 nov 2017
https://www.aanmelder.nl/ipb2017symposium#.Wi6iLnmDO70

Congres

Congres22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter
LandNederland
StadDelft
Periode27/11/1728/11/17
Internet adres

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  • Citeer dit

    Meighan, A., Wale, M. J., de Vries, T., Smalbrugge, E., & Williams, K. A. (2017). Low resistance metal interconnection for direct wafer bonding of electronic to photonic ICs. In Proceedings of the 22nd Annual Symposium of the IEEE Photonics Society Benelux Chapter, November 27-28, 2017, Delft, Netherlands (blz. 1-4)