Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography

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Samenvatting

For the first time we demonstrate the application of 193 nm optical lithography to InP-Membrane-on-Silicon (IMOS) passive nanophotonic integrated circuits. A record low propagation loss of 1.3±0.1dB/cm is demonstrated in a Mach-Zehnder interferometer (MZI) circuit and a microring resonator Q-factor up to 62⋅103 with 4 nm FSR is measured.
Originele taal-2Engels
Titel2019 Compound Semiconductor Week, CSW 2019 - Proceedings
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's2
ISBN van elektronische versie978-1-7281-0080-7
DOI's
StatusGepubliceerd - 19 mei 2019
EvenementCompound Semiconductor Week - Kasugano International Forum, Nara, Japan
Duur: 19 jun 201923 jun 2019

Congres

CongresCompound Semiconductor Week
Verkorte titelCSW 2019
LandJapan
StadNara
Periode19/06/1923/06/19

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Citeer dit

van Engelen, J., Reniers, S., Bolk, J., Williams, K., van der Tol, J., & Jiao, Y. (2019). Low loss InP membrane photonic integrated circuits enabled by 193-nm deep UV lithography. In 2019 Compound Semiconductor Week, CSW 2019 - Proceedings [8819069] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/ICIPRM.2019.8819069