Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

P.R.F. Rocha; H.L. Gomes; L.K.J. Vandamme; Qian Chen; A. Kiazadeh; D.M. Leeuw, de; S.C.J. Meskers

doi:10.1109/TED.2012.2204059

Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

P.R.F. Rocha, H.L. Gomes, L.K.J. Vandamme, Qian Chen, A. Kiazadeh, D.M. Leeuw, de, S.C.J. Meskers

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

Originele taal-2	Engels
Pagina's (van-tot)	2483-2497
Aantal pagina's	5
Tijdschrift	IEEE Transactions on Electron Devices
Volume	59
Nummer van het tijdschrift	9
DOI's	https://doi.org/10.1109/TED.2012.2204059
Status	Gepubliceerd - 2012

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10.1109/TED.2012.2204059

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title = "Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.",

abstract = "Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.",

author = "P.R.F. Rocha and H.L. Gomes and L.K.J. Vandamme and Qian Chen and A. Kiazadeh and {Leeuw, de}, D.M. and S.C.J. Meskers",

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doi = "10.1109/TED.2012.2204059",

language = "English",

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T1 - Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

AU - Rocha, P.R.F.

AU - Gomes, H.L.

AU - Vandamme, L.K.J.

AU - Chen, Qian

AU - Kiazadeh, A.

AU - Leeuw, de, D.M.

AU - Meskers, S.C.J.

PY - 2012

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N2 - Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

AB - Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.

U2 - 10.1109/TED.2012.2204059

DO - 10.1109/TED.2012.2204059

M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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ER -

Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

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