Low-frequency deffusion noise in resistive-switching memories based on metal-oxide polymer structure.

P.R.F. Rocha, H.L. Gomes, L.K.J. Vandamme, Qian Chen, A. Kiazadeh, D.M. Leeuw, de, S.C.J. Meskers

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

14 Citaten (Scopus)
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Low-frequency noise is studied in resistive-switching memories based on metal–oxide polymer diodes. The noise spectral power follows a $hbox{1}/f^{gamma}$ behavior, with $gamma = hbox{1}$ in the ohmic region and with $gamma = hbox{3/2}$ at high bias beyond the ohmic region. The exponent $gamma = hbox{3/2}$ is explained as noise caused by Brownian motion or diffusion of defects which induce fluctuations in diode current. The figure of merit to classify $hbox{1}/f$ noise in thin films has an estimated value of $hbox{10}^{-21} hbox{cm}^{2}/Omega$, which is typical for metals or doped semiconductors. This value in combination with the low diode current indicates that the $hbox{1}/f$ noise is generated in the narrow localized regions in the polymer between the contacts. The analysis unambiguously shows that the current in bistable nonvolatile memories is filamentary.
Originele taal-2Engels
Pagina's (van-tot)2483-2497
Aantal pagina's5
TijdschriftIEEE Transactions on Electron Devices
Nummer van het tijdschrift9
StatusGepubliceerd - 2012


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