LOD-FDTD method for physical simulation of semiconductor devices

R. Mirzavand, A. Abdipour, W.H.A. Schilders, G. Moradi, M. Movahhedi

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

3 Citaten (Scopus)

Samenvatting

This paper describes a locally one-dimensional finite-difference time domain method for the two-dimensional time-dependent simulation of semiconductor devices. This approach leads to significant reduction of the semiconductor simulation time. We can reach over 80% reduction in the simulation time by using this technique while maintaining the same degree of accuracy achieved using the conventional approach. As the first step in the performance investigation, we use the electrons flow equations in the absence of holes and recombination in this paper.
Originele taal-2Engels
TitelProceedings of the International Conference on Microwave and Millimeter Wave Technology (ICMMT'10, Chengdu, China, May 8-11, 2010)
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's1321-1324
ISBN van geprinte versie978-1-4244-5705-2
DOI's
StatusGepubliceerd - 2010

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