Local THz resonances in semiconductors: Active control of near-fields, THz extinction and beaming

J. Gómez Rivas, G. Georgiou, A. Bhattacharya

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

The versatile nature of semiconductors with a permittivity that can be controlled by the amount of free carriers, makes them excellent materials for active plasmonics and metasurfaces. Structures made out of semiconductors can give rise to localized resonances at THz frequencies. The precise behavior of these structures depends on their geometry and permittivity; parameters that can be actively tuned. Subwavelength local field enhancements are the most relevant characteristic of localized resonances. These enhancements have triggered the interest for resonant metallic structures in sensing and spectroscopic applications. Local field enhancements in plasmonic structures have been thoroughly investigated at optical and infrared frequencies using near field probing techniques [1]. These techniques provide an excellent spatial resolution but they are not sensitive to the individual field components.
Originele taal-2Engels
TitelEuropean Conference on Lasers and Electro-Optics, CLEO 2015
UitgeverijOptical Society of America (OSA)
Pagina'sCC_4_3
Aantal pagina's1
ISBN van geprinte versie9781467374750
StatusGepubliceerd - 21 jul 2014
EvenementConference on Lasers and Electro-Optics, CLEO 2015 - San Jose Convention Center, San Jose, Verenigde Staten van Amerika
Duur: 10 mei 201515 mei 2015
Congresnummer: 11
http://www.cleopr2015.org/

Congres

CongresConference on Lasers and Electro-Optics, CLEO 2015
Verkorte titelCLEO 2015
Land/RegioVerenigde Staten van Amerika
StadSan Jose
Periode10/05/1515/05/15
Ander2015 European Conference on Lasers and Electro-Optics
Internet adres

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