Local digital etching and infiltration for tuning of a H1- Cavity in deeply etched InP/InGaAsP/InP photonic crystals

H.H.J.E. Kicken, P.F.A. Alkemade, R.W. Heijden, van der, F. Karouta, R. Nötzel, E.W.J.M. Drift, van der, H.W.M. Salemink

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

Local post-production processing of single holes in a planar photonic crystal is demonstrated by selectively opening a masking layer by focused ion beam milling. Local tuning was optically demonstrated by both blueshifting and subsequent red-shifting the resonance frequency of a point defect cavity. Since only a few holes of the PC are affected by the post-processing, the Q-factor is not significantly changed. This method can be applied to precisely control the resonant frequency, and can also be used for mode selective tuning.
Originele taal-2Engels
TitelConference Proceedings - International Conference on Indium Phosphide and Related Materials
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's31-34
ISBN van geprinte versie9781424434336
DOI's
StatusGepubliceerd - 2009
Evenementconference; IPRM '09. IEEE International Conference; 2009-05-10; 2009-05-14 -
Duur: 10 mei 200914 mei 2009

Congres

Congresconference; IPRM '09. IEEE International Conference; 2009-05-10; 2009-05-14
Periode10/05/0914/05/09
AnderIPRM '09. IEEE International Conference

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