Light emission from direct bandgap hexagonal SiGe

J. E.M. Haverkort, Y. Ren, A. Dijkstra, E. Fadaly, M. A. Verheijen, G. Reithmaier, D. Busse, S. Botti, J. Finley, E. P.A.M. Bakkers

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Samenvatting

Hexagonal crystal phase Si<inf>1-x</inf>Ge<inf>x</inf> is a direct bandgap semiconductor for x > 70%. We observe tunable light emission 1.8-3.5 μm at 4K. We observe amplified spontaneous emission as well as coherent light emission for Hex-Ge.

Originele taal-2Engels
TitelIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
UitgeverijOptical Society of America (OSA)
Aantal pagina's2
ISBN van elektronische versie9781557528209
DOI's
StatusGepubliceerd - 1 jan 2018
EvenementIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 - Zurich, Zwitserland
Duur: 2 jul 20185 jul 2018

Congres

CongresIntegrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018
LandZwitserland
StadZurich
Periode2/07/185/07/18

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Haverkort, J. E. M., Ren, Y., Dijkstra, A., Fadaly, E., Verheijen, M. A., Reithmaier, G., ... Bakkers, E. P. A. M. (2018). Light emission from direct bandgap hexagonal SiGe. In Integrated Photonics Research, Silicon and Nanophotonics, IPRSN 2018 [ITu4I.5] Optical Society of America (OSA). https://doi.org/10.1364/IPRSN.2018.ITu4I.5