Large magnetoresistance in Si:B-SiO2-Al structures

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

9 Citaten (Scopus)
94 Downloads (Pure)

Samenvatting

A magnetic-field-dependent resistance change of eight orders of magnitude is obsd. in B-doped Si-SiO2-Al structures. In order to identify the elementary mechanisms governing this phenomenon, the thickness of the oxidic layer, which is used as an interface energy barrier, was varied by changing the exposure time to an O plasma. Next, the chem. compn. was monitored by in situ XPS measurements. From current-voltage measurements, we observe that at low temps., an ultrathin SiO2 layer provides the kinetic energy to trigger an autocatalytic process of impact ionization. A magnetic field suppresses the onset of impact ionization to higher elec. fields, resulting in a large magnetoresistance.
Originele taal-2Engels
Artikelnummer07F309
Pagina's (van-tot)07F309-1/3
TijdschriftJournal of Applied Physics
Volume103
Nummer van het tijdschrift7, Pt. 3
DOI's
StatusGepubliceerd - 2008

Vingerafdruk Duik in de onderzoeksthema's van 'Large magnetoresistance in Si:B-SiO2-Al structures'. Samen vormen ze een unieke vingerafdruk.

  • Citeer dit