Ion assisted ETP-CVD a-Si:H at well defined ion energies

Engineering

• Energy Engineering 100%
• Chemical Vapor Deposition 100%
• Ion Implantation 100%
• Ion Energy 100%
• Defect Density 100%
• Transmissions 50%
• Fourier Transform 50%
• Material Constant 50%
• Hydrogenated Amorphous Silicon 50%
• Photocurrent 50%
• Substrate Bias 50%
• Surface Atom 50%
• Densification 50%
• FTIR Spectroscopy 50%

Material Science

• Film 100%
• Defect Density 100%
• Ion Implantation 100%
• Chemical Vapor Deposition 100%
• Film Growth 50%
• Density 50%
• Fourier Transform Infrared Spectroscopy 50%
• Amorphous Silicon 50%
• Materials Property 50%