Ion assisted ETP-CVD a-Si:H at well defined ion energies

M. A. Wank; R. A.C.M.M. van Swaaij; M. C.M. van de Sanden

doi:10.1557/PROC-1153-A17-06

Ion assisted ETP-CVD a-Si:H at well defined ion energies

M. A. Wank, R. A.C.M.M. van Swaaij, M. C.M. van de Sanden

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

1 Citaat (Scopus)

Samenvatting

Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

Originele taal-2	Engels
Titel	Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009
Redacteuren	A. Flewitt, Q. Wang, J. Hou, S. Uchikoga, A. Nathan
Plaats van productie	Warrendale, Pa.
Uitgeverij	Materials Research Society
Pagina's	339-344
Aantal pagina's	6
ISBN van geprinte versie	9781605111261
DOI's	https://doi.org/10.1557/PROC-1153-A17-06
Status	Gepubliceerd - 1 dec. 2009
Evenement	MRS, San Francisco, USA - San Francisco, Verenigde Staten van Amerika Duur: 13 apr. 2009 → 17 apr. 2009 https://www.mrs.org/spring2009 http://www.mrs.org/s09-program-a/

Publicatie series

Naam	Materials Research Society Symposium Proceedings
Volume	1153
ISSN van geprinte versie	0272-9172

Congres

Congres	MRS, San Francisco, USA
Land/Regio	Verenigde Staten van Amerika
Stad	San Francisco
Periode	13/04/09 → 17/04/09
Ander	2009 MRS Spring Meeting; San Francisco, CA, Symposium A
Internet adres	https://www.mrs.org/spring2009 http://www.mrs.org/s09-program-a/

Toegang tot document

10.1557/PROC-1153-A17-06

Andere bestanden en links

Link to publication in Scopus

Citeer dit

Wank, M. A., van Swaaij, R. A. C. M. M., & van de Sanden, M. C. M. (2009). Ion assisted ETP-CVD a-Si:H at well defined ion energies. In A. Flewitt, Q. Wang, J. Hou, S. Uchikoga, & A. Nathan (editors), Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009 (blz. 339-344). (Materials Research Society Symposium Proceedings; Vol. 1153). Materials Research Society. https://doi.org/10.1557/PROC-1153-A17-06

Wank, M. A. ; van Swaaij, R. A.C.M.M. ; van de Sanden, M. C.M. / Ion assisted ETP-CVD a-Si:H at well defined ion energies. Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. redacteur / A. Flewitt ; Q. Wang ; J. Hou ; S. Uchikoga ; A. Nathan. Warrendale, Pa. : Materials Research Society, 2009. blz. 339-344 (Materials Research Society Symposium Proceedings).

@inproceedings{68740f6d803540a29321be2271c81504,

title = "Ion assisted ETP-CVD a-Si:H at well defined ion energies",

abstract = "Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.",

author = "Wank, {M. A.} and {van Swaaij}, {R. A.C.M.M.} and {van de Sanden}, {M. C.M.}",

year = "2009",

month = dec,

day = "1",

doi = "10.1557/PROC-1153-A17-06",

language = "English",

isbn = "9781605111261",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "339--344",

editor = "A. Flewitt and Q. Wang and J. Hou and S. Uchikoga and A. Nathan",

booktitle = "Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009",

address = "United States",

note = "2009 MRS Spring Meeting & Exhibit ; Conference date: 13-04-2009 Through 17-04-2009",

url = "https://www.mrs.org/spring2009, http://www.mrs.org/s09-program-a/",

}

Wank, MA, van Swaaij, RACMM & van de Sanden, MCM 2009, Ion assisted ETP-CVD a-Si:H at well defined ion energies. in A Flewitt, Q Wang, J Hou, S Uchikoga & A Nathan (uitgave), Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Materials Research Society Symposium Proceedings, vol. 1153, Materials Research Society, Warrendale, Pa., blz. 339-344, MRS, San Francisco, USA, San Francisco, California, Verenigde Staten van Amerika, 13/04/09. https://doi.org/10.1557/PROC-1153-A17-06

Ion assisted ETP-CVD a-Si:H at well defined ion energies. / Wank, M. A.; van Swaaij, R. A.C.M.M.; van de Sanden, M. C.M.
Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. uitgave / A. Flewitt; Q. Wang; J. Hou; S. Uchikoga; A. Nathan. Warrendale, Pa.: Materials Research Society, 2009. blz. 339-344 (Materials Research Society Symposium Proceedings; Vol. 1153).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Ion assisted ETP-CVD a-Si:H at well defined ion energies

AU - Wank, M. A.

AU - van Swaaij, R. A.C.M.M.

AU - van de Sanden, M. C.M.

PY - 2009/12/1

Y1 - 2009/12/1

N2 - Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

AB - Hydrogenated amorphous silicon (a-Si:H) was deposited with the Expanding Thermal Plasma-CVD (ETP CVD) method utilizing pulse-shaped substrate biasing to induce controlled ion bombardment during film growth. The films are analyzed with in-situ real time spectroscopic ellispometry, FTIR spectroscopy, as well as reflection-transmission and Fourier transform photocurrent spectroscopy (FTPS) measurements. The aim of this work is to investigate the effect ion bombardment with well defined energy on the roughness evolution of the film and the material properties. We observe two separate energy regimes with material densification and relatively constant defect density below ∼120-130 eV and a constant material density at increasing defect density > 120-130 eV substrate bias. We discuss our results in terms of possible ion - surface atom interactions and relate our observations to reports in literature.

UR - http://www.scopus.com/inward/record.url?scp=77951095528&partnerID=8YFLogxK

U2 - 10.1557/PROC-1153-A17-06

DO - 10.1557/PROC-1153-A17-06

M3 - Conference contribution

SN - 9781605111261

T3 - Materials Research Society Symposium Proceedings

SP - 339

EP - 344

BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009

A2 - Flewitt, A.

A2 - Wang, Q.

A2 - Hou, J.

A2 - Uchikoga, S.

A2 - Nathan, A.

PB - Materials Research Society

CY - Warrendale, Pa.

T2 - 2009 MRS Spring Meeting & Exhibit

Y2 - 13 April 2009 through 17 April 2009

ER -

Wank MA, van Swaaij RACMM, van de Sanden MCM. Ion assisted ETP-CVD a-Si:H at well defined ion energies. In Flewitt A, Wang Q, Hou J, Uchikoga S, Nathan A, redacteurs, Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2009. Warrendale, Pa.: Materials Research Society. 2009. blz. 339-344. (Materials Research Society Symposium Proceedings). doi: 10.1557/PROC-1153-A17-06

Ion assisted ETP-CVD a-Si:H at well defined ion energies

Samenvatting

Publicatie series

Congres

Toegang tot document

Andere bestanden en links

Vingerafdruk

Citeer dit