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This work reviews and investigates two de-embedding methods contributing to the characterization of the active region within uni-traveling carrier photodiodes. De-embedding techniques remove the parasitic effects of the waveguides connected to the active area of these devices allowing the calculation of their series resistance and junction capacitance. The Open-Short method is examined where a systematic error introduced by the technique is identified. This error is analytically extracted and a correction is implemented. The properties of an S-Parameter based de-embedding are also analyzed through simulation approaches. The lumped components calculated and verified by these processes are compared for diodes with different sizes.
|Titel||2020 50th European Microwave Conference, EuMC 2020|
|ISBN van elektronische versie||9782874870590|
|Status||Gepubliceerd - 2021|