Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition

E.A. Filatova, A. Mameli, A. J. M. Mackus, F. Roozeboom, W. M. M. Kessels, D. Hausmann, S. D. Elliott

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Samenvatting

Area-selective atomic layer deposition (AS-ALD) allows nanostructures of arbitrary composition and lateral shape to be built with atomic precision on pre-selected substrate locations. Most current approaches for AS-ALD are based on local inhibition (e.g. with self-assembled monolayers) or activation. However, for some applications of AS-ALD (e.g. in self-aligned fabrication) it is relevant to be able to exploit differences in chemical behavior of a pre-patterned substrate. For this reason, investigating inherent differences in nucleation on diverse substrates is of crucial importance for developing future AS-ALD processes. In this paper we are focussing on substrates of silicon and silicon-based dielectric materials (SiC, Si0 2 and SiNx) used in electronics.

Originele taal-2Engels
Titel2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Aantal pagina's2
ISBN van elektronische versie978-1-5386-5336-4
ISBN van geprinte versie978-1-5386-5337-1
DOI's
StatusGepubliceerd - 2018
Evenement2018 IEEE 18th International Conference on Nanotechnology - Cork, Ierland
Duur: 23 jul 201826 jul 2018

Congres

Congres2018 IEEE 18th International Conference on Nanotechnology
LandIerland
StadCork
Periode23/07/1826/07/18

Citeer dit

Filatova, E. A., Mameli, A., Mackus, A. J. M., Roozeboom, F., Kessels, W. M. M., Hausmann, D., & Elliott, S. D. (2018). Investigating the difference in nucleation during Si-based ALD on different surfaces for future area-selective deposition. In 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO) [8626336] Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/NANO.2018.8626336