InP/InGaAs photodetector on SOI circuitry

P.R.A. Binetti; X.J.M. Leijtens; T. Vries, de; Y.S. Oei; L. Di Cioccio; J.-M. Fédéli; C. Lagahe; J. Van Campenhout; D. Thourhout, Van; P.J. Veldhoven, van; R. Nötzel; M.K. Smit

doi:10.1109/GROUP4.2009.5338390

InP/InGaAs photodetector on SOI circuitry

P.R.A. Binetti, X.J.M. Leijtens, T. Vries, de, Y.S. Oei, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, J. Van Campenhout, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

Originele taal-2	Engels
Titel	Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	214-216
ISBN van geprinte versie	978-1-4244-4403-8
DOI's	https://doi.org/10.1109/GROUP4.2009.5338390
Status	Gepubliceerd - 2009

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10.1109/GROUP4.2009.5338390

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Binetti, P. R. A., Leijtens, X. J. M., Vries, de, T., Oei, Y. S., Di Cioccio, L., Fédéli, J.-M., Lagahe, C., Van Campenhout, J., Thourhout, Van, D., Veldhoven, van, P. J., Nötzel, R., & Smit, M. K. (2009). InP/InGaAs photodetector on SOI circuitry. In Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California (blz. 214-216). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/GROUP4.2009.5338390

@inproceedings{e1b4439a79b14d96a47a0b47e54686ef,

title = "InP/InGaAs photodetector on SOI circuitry",

abstract = "We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.",

author = "P.R.A. Binetti and X.J.M. Leijtens and {Vries, de}, T. and Y.S. Oei and {Di Cioccio}, L. and J.-M. F{\'e}d{\'e}li and C. Lagahe and {Van Campenhout}, J. and {Thourhout, Van}, D. and {Veldhoven, van}, P.J. and R. N{\"o}tzel and M.K. Smit",

year = "2009",

doi = "10.1109/GROUP4.2009.5338390",

language = "English",

isbn = "978-1-4244-4403-8",

pages = "214--216",

booktitle = "Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

}

Binetti, PRA, Leijtens, XJM, Vries, de, T, Oei, YS, Di Cioccio, L, Fédéli, J-M, Lagahe, C, Van Campenhout, J, Thourhout, Van, D, Veldhoven, van, PJ, Nötzel, R & Smit, MK 2009, InP/InGaAs photodetector on SOI circuitry. in Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California. Institute of Electrical and Electronics Engineers, Piscataway, blz. 214-216. https://doi.org/10.1109/GROUP4.2009.5338390

InP/InGaAs photodetector on SOI circuitry. / Binetti, P.R.A.; Leijtens, X.J.M.; Vries, de, T. et al.
Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California. Piscataway: Institute of Electrical and Electronics Engineers, 2009. blz. 214-216.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - InP/InGaAs photodetector on SOI circuitry

AU - Binetti, P.R.A.

AU - Leijtens, X.J.M.

AU - Vries, de, T.

AU - Oei, Y.S.

AU - Di Cioccio, L.

AU - Fédéli, J.-M.

AU - Lagahe, C.

AU - Van Campenhout, J.

AU - Thourhout, Van, D.

AU - Veldhoven, van, P.J.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2009

Y1 - 2009

N2 - We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

AB - We present the design, fabrication and characterization of an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. Measured detector responsivity and 3 dB bandwidth are 0.45 A/W and 33 GHz, respectively. The photonic device fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.

U2 - 10.1109/GROUP4.2009.5338390

DO - 10.1109/GROUP4.2009.5338390

M3 - Conference contribution

SN - 978-1-4244-4403-8

SP - 214

EP - 216

BT - Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

ER -

Binetti PRA, Leijtens XJM, Vries, de T, Oei YS, Di Cioccio L, Fédéli JM et al. InP/InGaAs photodetector on SOI circuitry. In Proceedings of the 6th IEEE International Conference on Group IV Photonics 2009. GFP '09, 9-11 September 2009, San Francisco, California. Piscataway: Institute of Electrical and Electronics Engineers. 2009. blz. 214-216 doi: 10.1109/GROUP4.2009.5338390

InP/InGaAs photodetector on SOI circuitry

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