InP photonic integrated circuits on silicon

Vertaalde titel van de bijdrage: Fotonisch geintegreerde InP-circuits op silicium

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureHoofdstukAcademicpeer review

2 Citaten (Scopus)
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Samenvatting

IMOS (InP Membrane On Silicon) is a platform-based approach to creating Indium Phosphide (InP) nano-photonic integrated circuits. It uses monolithic integration of all photonic functions in the InP layers to leverage the most efficient optoelectronic processes and to remove optical interfaces between separately grown wafers. Using an optoelectronic material for the photonic components provides a powerful route to nanoscale miniaturisation and circuit level performance enhancements.
In this chapter we review the progress in the passive and active InP building blocks and highlight routes to miniaturisation and performance scaling. We address the interfaces between building blocks, which are critical to a powerful platform approach. The platform approach enables customisation by designers to create new components and circuits. The process design kit methodology is applied to provide a route to circuit design abstraction.
Originele taal-2Engels
TitelSilicon Photonics
RedacteurenSebastian Lourdudoss, Ray T. Chen, Chennupati Jagadish
UitgeverijElsevier
Hoofdstuk7
Pagina's189-219
Aantal pagina's31
ISBN van elektronische versie9780128155196
ISBN van geprinte versie9780128150993
DOI's
StatusGepubliceerd - 14 sep 2018

Publicatie series

NaamSemiconductors and Semimetals
UitgeverijElsevier
Volume99
ISSN van geprinte versie0080-8784

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Citeer dit

van der Tol, J. J. G. M., Jiao, Y., & Williams, K. A. (2018). InP photonic integrated circuits on silicon. In S. Lourdudoss, R. T. Chen, & C. Jagadish (editors), Silicon Photonics (blz. 189-219). (Semiconductors and Semimetals; Vol. 99). Elsevier. https://doi.org/10.1016/bs.semsem.2018.08.005