InP nanowire solar cell with high open circuit voltage and high fill factor

Y. Cui, J. Wang, S.R. Plissard, M. Trainor, T.T.T. Vu, H.I.T. Hauge, J.E.M. Haverkort, E.P.A.M. Bakkers

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

Originele taal-2Engels
TitelOptical Nanostructures and Advanced Materials for Photovoltaics, PV 2012
UitgeverijElsevier
Aantal pagina's2
ISBN van geprinte versie9781557529527
StatusGepubliceerd - 1 dec 2012
EvenementOptical Nanostructures and Advanced Materials for Photovoltaics, (PV2012) - Eindhoven, Nederland
Duur: 11 nov 201214 nov 2012

Congres

CongresOptical Nanostructures and Advanced Materials for Photovoltaics, (PV2012)
Verkorte titelPV2012
LandNederland
StadEindhoven
Periode11/11/1214/11/12

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  • Citeer dit

    Cui, Y., Wang, J., Plissard, S. R., Trainor, M., Vu, T. T. T., Hauge, H. I. T., Haverkort, J. E. M., & Bakkers, E. P. A. M. (2012). InP nanowire solar cell with high open circuit voltage and high fill factor. In Optical Nanostructures and Advanced Materials for Photovoltaics, PV 2012 [JT5A.1] Elsevier.