InP nanowire solar cell with high open circuit voltage and high fill factor

Y. Cui, J. Wang, S.R. Plissard, M. Trainor, T.T.T. Vu, H.I.T. Hauge, J.E.M. Haverkort, E.P.A.M. Bakkers

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

We demonstrate an InP axial pn-junction nanowire solar cell array with 107 diode rectification factor, 0.66V open-circuit voltage, 72% fill factor, and 5.08% power efficiency by using post-growth nanowire sidewall etching.

Originele taal-2Engels
TitelSolid-State and Organic Lighting, SOLED 2012
Plaats van productieWashington
UitgeverijOptical Society of America (OSA)
Aantal pagina's2
ISBN van elektronische versie978-1-55752-952-7
DOI's
StatusGepubliceerd - 11 nov 2012
EvenementOptical Instrumentation for Energy and Environmental Applications, E2 2012 - Eindhoven, Nederland
Duur: 11 nov 201214 nov 2012

Congres

CongresOptical Instrumentation for Energy and Environmental Applications, E2 2012
LandNederland
StadEindhoven
Periode11/11/1214/11/12

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Citeer dit

Cui, Y., Wang, J., Plissard, S. R., Trainor, M., Vu, T. T. T., Hauge, H. I. T., ... Bakkers, E. P. A. M. (2012). InP nanowire solar cell with high open circuit voltage and high fill factor. In Solid-State and Organic Lighting, SOLED 2012 [JT5A.1] Washington: Optical Society of America (OSA). https://doi.org/10.1364/E2.2012.JT5A.1