InP nanowire array solar cell with cleaned sidewalls

Y. Cui, S. Plissard, J. Wang, T.T.T. Vu, E. Smalbrugge, E.J. Geluk, T. de Vries, J. Bolk, M.J. Trainor, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers

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We have fabricated InP nanowire array solar cells with an axial p-n junction. Catalyst gold nanoparticles were first patterned into an array by nanoimprint lithography. The nanowire array was grown in 19 minutes by vapor-liquid-solid growth. The sidewalls were in-situ etched by HCl and ex-situ cleaned with a piranha etch. With this cleaning procedure, we could remove the sidewall extrusions and carbon contamination on the nanowire sidewall. We obtained a Voc of 0.68V, a fill factor of 71%, a diode rectification ratio of 107, an ideality factor of 2.12, a solar cell efficiency of 10.2% and a >90% device yield.

Originele taal-2Engels
Titel2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 16-21 June 2013, Tampa, Florida
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's3389-3392
Aantal pagina's4
ISBN van geprinte versie978-1-4799-3299-3
DOI's
StatusGepubliceerd - 2013
Evenement39th IEEE Photovoltaic Specialists Conference (PVSC 2013) - Tampa Convention Center , Tampa, Verenigde Staten van Amerika
Duur: 16 jun 201321 jun 2013
Congresnummer: 39
https://www.ieee-pvsc.org/PVSC39/

Congres

Congres39th IEEE Photovoltaic Specialists Conference (PVSC 2013)
Verkorte titelPVSC 2013
LandVerenigde Staten van Amerika
StadTampa
Periode16/06/1321/06/13
Internet adres

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Cui, Y., Plissard, S., Wang, J., Vu, T. T. T., Smalbrugge, E., Geluk, E. J., ... Bakkers, E. P. A. M. (2013). InP nanowire array solar cell with cleaned sidewalls. In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 16-21 June 2013, Tampa, Florida (blz. 3389-3392). [6745176] Piscataway: Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/PVSC.2013.6745176