InP-based photodetector bonded on CMOS with Si3N4 interconnect waveguides

P.R.A. Binetti, X.J.M. Leijtens, A. Morant Ripoll, T. Vries, de, E. Smalbrugge, Y.S. Oei, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, R. Orobtchouk, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

10 Citaten (Scopus)
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Samenvatting

We developed an InP-based photodetector which was bonded on a CMOS wafer containing a Si3N4-wiring photonic circuit. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing. Integration technology and experimental results are presented in this paper. © 2009 IEEE.
Originele taal-2Engels
TitelProceedings of the 2009 IEEE LEOS Annual Meeting Conference, (LEOS '09) 4 - 8 October 2009, Belek-Antalya
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina'sTuB2-139/140
ISBN van geprinte versie978-1-4244-3680-4
DOI's
StatusGepubliceerd - 2009
Evenement22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009) - Antalya, Turkije
Duur: 4 okt. 20098 okt. 2009
Congresnummer: 22

Congres

Congres22nd Annual Meeting of the IEEE Photonics Society (LEOS 2009)
Verkorte titelLEOS 2009
Land/RegioTurkije
StadAntalya
Periode4/10/098/10/09
AnderIEEE LEOS Annual Meeting Conference

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