InGaAs/InP membrane photodetector bonded on silicon

P.R.A. Binetti; X.J.M. Leijtens; T. Vries, de; Y.S. Oei; O. Raz; L. Di Cioccio; J.-M. Fédéli; C. Lagahe; R. Orobtchouk; J. Van Campenhout; D. Thourhout, Van; P.J. Veldhoven, van; R. Nötzel; M.K. Smit

InGaAs/InP membrane photodetector bonded on silicon

P.R.A. Binetti
, X.J.M. Leijtens
, T. Vries, de
, Y.S. Oei
, O. Raz
, L. Di Cioccio
, J.-M. Fédéli
, C. Lagahe
, R. Orobtchouk
, J. Van Campenhout
, D. Thourhout, Van
, P.J. Veldhoven, van
, R. Nötzel
, M.K. Smit

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We present the design, fabrication and characterization of a compact photodetector suitable for photonic interconnections on electronic ICs. In our approach, the InP-based optical sources and detectors are linked via Si photonic waveguides in an interconnection layer on top of the CMOS circuitry. The photonic device processing is compatible with Si wafer scale fabrication steps, which guarantees compatibility with future ICs manufacture. The detector maskes use of an InP membrane waveguide to couple the light out of the interconnection layer and carry it towards the absorption region. A responsivity of 0.45 A/W and a rather flat frequency response in the 0-20 GHz range were measured.

Originele taal-2	Engels
Titel	Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	187-190
ISBN van geprinte versie	9789036527682
Status	Gepubliceerd - 2008
Evenement	13th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 27-28, 2008, Enschede, The Netherlands - Enschede, Nederland Duur: 27 nov. 2008 → 28 nov. 2008

Congres

Congres	13th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 27-28, 2008, Enschede, The Netherlands
Land/Regio	Nederland
Stad	Enschede
Periode	27/11/08 → 28/11/08
Ander	13th annual symposium of the IEEE/LEOS Benelux Chapter, 2008, Enschede, The Netherlands

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Binetti, P. R. A., Leijtens, X. J. M., Vries, de, T., Oei, Y. S., Raz, O., Di Cioccio, L., Fédéli, J.-M., Lagahe, C., Orobtchouk, R., Van Campenhout, J., Thourhout, Van, D., Veldhoven, van, P. J., Nötzel, R., & Smit, M. K. (2008). InGaAs/InP membrane photodetector bonded on silicon. In Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands (blz. 187-190). Institute of Electrical and Electronics Engineers.

@inproceedings{d08296ba6e1a474caacbd5bf64671dfe,

title = "InGaAs/InP membrane photodetector bonded on silicon",

abstract = "We present the design, fabrication and characterization of a compact photodetector suitable for photonic interconnections on electronic ICs. In our approach, the InP-based optical sources and detectors are linked via Si photonic waveguides in an interconnection layer on top of the CMOS circuitry. The photonic device processing is compatible with Si wafer scale fabrication steps, which guarantees compatibility with future ICs manufacture. The detector maskes use of an InP membrane waveguide to couple the light out of the interconnection layer and carry it towards the absorption region. A responsivity of 0.45 A/W and a rather flat frequency response in the 0-20 GHz range were measured.",

author = "P.R.A. Binetti and X.J.M. Leijtens and \{Vries, de\}, T. and Y.S. Oei and O. Raz and \{Di Cioccio\}, L. and J.-M. F{\'e}d{\'e}li and C. Lagahe and R. Orobtchouk and \{Van Campenhout\}, J. and \{Thourhout, Van\}, D. and \{Veldhoven, van\}, P.J. and R. N{\"o}tzel and M.K. Smit",

year = "2008",

language = "English",

isbn = "9789036527682",

pages = "187--190",

booktitle = "Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "13th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 27-28, 2008, Enschede, The Netherlands ; Conference date: 27-11-2008 Through 28-11-2008",

}

Binetti, PRA, Leijtens, XJM, Vries, de, T, Oei, YS, Raz, O, Di Cioccio, L, Fédéli, J-M, Lagahe, C, Orobtchouk, R, Van Campenhout, J, Thourhout, Van, D, Veldhoven, van, PJ, Nötzel, R & Smit, MK 2008, InGaAs/InP membrane photodetector bonded on silicon. in Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands. Institute of Electrical and Electronics Engineers, Piscataway, blz. 187-190, 13th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 27-28, 2008, Enschede, The Netherlands, Enschede, Nederland, 27/11/08.

InGaAs/InP membrane photodetector bonded on silicon. / Binetti, P.R.A.; Leijtens, X.J.M.; Vries, de, T. et al.
Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands. Piscataway: Institute of Electrical and Electronics Engineers, 2008. blz. 187-190.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - InGaAs/InP membrane photodetector bonded on silicon

AU - Binetti, P.R.A.

AU - Leijtens, X.J.M.

AU - Vries, de, T.

AU - Oei, Y.S.

AU - Raz, O.

AU - Di Cioccio, L.

AU - Fédéli, J.-M.

AU - Lagahe, C.

AU - Orobtchouk, R.

AU - Van Campenhout, J.

AU - Thourhout, Van, D.

AU - Veldhoven, van, P.J.

AU - Nötzel, R.

AU - Smit, M.K.

PY - 2008

Y1 - 2008

N2 - We present the design, fabrication and characterization of a compact photodetector suitable for photonic interconnections on electronic ICs. In our approach, the InP-based optical sources and detectors are linked via Si photonic waveguides in an interconnection layer on top of the CMOS circuitry. The photonic device processing is compatible with Si wafer scale fabrication steps, which guarantees compatibility with future ICs manufacture. The detector maskes use of an InP membrane waveguide to couple the light out of the interconnection layer and carry it towards the absorption region. A responsivity of 0.45 A/W and a rather flat frequency response in the 0-20 GHz range were measured.

AB - We present the design, fabrication and characterization of a compact photodetector suitable for photonic interconnections on electronic ICs. In our approach, the InP-based optical sources and detectors are linked via Si photonic waveguides in an interconnection layer on top of the CMOS circuitry. The photonic device processing is compatible with Si wafer scale fabrication steps, which guarantees compatibility with future ICs manufacture. The detector maskes use of an InP membrane waveguide to couple the light out of the interconnection layer and carry it towards the absorption region. A responsivity of 0.45 A/W and a rather flat frequency response in the 0-20 GHz range were measured.

M3 - Conference contribution

SN - 9789036527682

SP - 187

EP - 190

BT - Proceedings of the 13th annual symposium of the IEEE/LEOS Benelux Chapter, 27-28 November 2008, Enschede, The Netherlands

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 13th Annual Symposium of the IEEE/LEOS Benelux Chapter, November 27-28, 2008, Enschede, The Netherlands

Y2 - 27 November 2008 through 28 November 2008

ER -

InGaAs/InP membrane photodetector bonded on silicon

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