InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm

D.G. Revin; L.R. Wilson; E.A. Zibik; R.P. Green; J.W. Cockburn; M.J. Steer; R.J. Airey; M. Hopkinson; P. Offermans; P.M. Koenraad; J.H. Wolter

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm

D.G. Revin, L.R. Wilson, E.A. Zibik, R.P. Green, J.W. Cockburn, M.J. Steer, R.J. Airey, M. Hopkinson, P. Offermans, P.M. Koenraad, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potencial of this system. ©2005 Optical Society of America

Originele taal-2	Engels
Titel	Proc. Int. Conference-on-Lasers-and-Electro-Optics-CLEO-IEEE (May 22-27, 2005)
Status	Gepubliceerd - 2005
Evenement	2005 Conference on Lasers and Electro-Optics (CLEO® 2005) - Baltimore, Verenigde Staten van Amerika Duur: 22 mei 2005 → 27 mei 2005

Congres

Congres	2005 Conference on Lasers and Electro-Optics (CLEO® 2005)
Verkorte titel	CLEO® 2005
Land/Regio	Verenigde Staten van Amerika
Stad	Baltimore
Periode	22/05/05 → 27/05/05
Ander	Proc. Int. Conference-on-Lasers-and-Electro-Optics

Citeer dit

@inproceedings{5cb3cc27b1654f36ba6e280863bc13a8,

title = "InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm",

abstract = "We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potencial of this system. {\textcopyright}2005 Optical Society of America",

author = "D.G. Revin and L.R. Wilson and E.A. Zibik and R.P. Green and J.W. Cockburn and M.J. Steer and R.J. Airey and M. Hopkinson and P. Offermans and P.M. Koenraad and J.H. Wolter",

year = "2005",

language = "English",

booktitle = "Proc. Int. Conference-on-Lasers-and-Electro-Optics-CLEO-IEEE (May 22-27, 2005)",

note = "2005 Conference on Lasers and Electro-Optics (CLEO{\textregistered} 2005), CLEO{\textregistered} 2005 ; Conference date: 22-05-2005 Through 27-05-2005",

}

Revin, DG, Wilson, LR, Zibik, EA, Green, RP, Cockburn, JW, Steer, MJ, Airey, RJ, Hopkinson, M, Offermans, P, Koenraad, PM & Wolter, JH 2005, InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm. in Proc. Int. Conference-on-Lasers-and-Electro-Optics-CLEO-IEEE (May 22-27, 2005). 2005 Conference on Lasers and Electro-Optics (CLEO® 2005), Baltimore, Maryland, Verenigde Staten van Amerika, 22/05/05.

TY - GEN

T1 - InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm

AU - Revin, D.G.

AU - Wilson, L.R.

AU - Zibik, E.A.

AU - Green, R.P.

AU - Cockburn, J.W.

AU - Steer, M.J.

AU - Airey, R.J.

AU - Hopkinson, M.

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2005

Y1 - 2005

N2 - We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potencial of this system. ©2005 Optical Society of America

AB - We report the first realization of 1no53Ga0.47As/AlAs056 Sbo.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potencial of this system. ©2005 Optical Society of America

M3 - Conference contribution

BT - Proc. Int. Conference-on-Lasers-and-Electro-Optics-CLEO-IEEE (May 22-27, 2005)

T2 - 2005 Conference on Lasers and Electro-Optics (CLEO® 2005)

Y2 - 22 May 2005 through 27 May 2005

ER -

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 μm

Samenvatting

Congres

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