InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

D.G. Revin; L.R. Wilson; E.A. Zibik; R.P. Green; J.W. Cockburn; M.J. Steer; R.J. Airey; M. Hopkinson; P. Offermans; P.M. Koenraad; J.H. Wolter

doi:10.1109/CLEO.2005.201741

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

D.G. Revin, L.R. Wilson, E.A. Zibik, R.P. Green, J.W. Cockburn, M.J. Steer, R.J. Airey, M. Hopkinson, P. Offermans, P.M. Koenraad, J.H. Wolter

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

Originele taal-2	Engels
Titel	2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1
Plaats van productie	Piscataway
Uitgeverij	Institute of Electrical and Electronics Engineers
Pagina's	248-250
ISBN van geprinte versie	1-55752-795-4
DOI's	https://doi.org/10.1109/CLEO.2005.201741
Status	Gepubliceerd - 2009
Evenement	2005 Conference on Lasers and Electro-Optics (CLEO® 2005) - Baltimore, Verenigde Staten van Amerika Duur: 22 mei 2005 → 27 mei 2005

Congres

Congres	2005 Conference on Lasers and Electro-Optics (CLEO® 2005)
Verkorte titel	CLEO® 2005
Land/Regio	Verenigde Staten van Amerika
Stad	Baltimore
Periode	22/05/05 → 27/05/05
Ander	Proc. Int. Conference-on-Lasers-and-Electro-Optics

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10.1109/CLEO.2005.201741

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Revin, D. G., Wilson, L. R., Zibik, E. A., Green, R. P., Cockburn, J. W., Steer, M. J., Airey, R. J., Hopkinson, M., Offermans, P., Koenraad, P. M., & Wolter, J. H. (2009). InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. In 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1 (blz. 248-250). Institute of Electrical and Electronics Engineers. https://doi.org/10.1109/CLEO.2005.201741

@inproceedings{98d6e29edd8843a0bdf1b556d7aec3a6,

title = "InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm",

abstract = "We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system",

author = "D.G. Revin and L.R. Wilson and E.A. Zibik and R.P. Green and J.W. Cockburn and M.J. Steer and R.J. Airey and M. Hopkinson and P. Offermans and P.M. Koenraad and J.H. Wolter",

year = "2009",

doi = "10.1109/CLEO.2005.201741",

language = "English",

isbn = "1-55752-795-4",

pages = "248--250",

booktitle = "2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1",

publisher = "Institute of Electrical and Electronics Engineers",

address = "United States",

note = "2005 Conference on Lasers and Electro-Optics (CLEO{\textregistered} 2005), CLEO{\textregistered} 2005 ; Conference date: 22-05-2005 Through 27-05-2005",

}

Revin, DG, Wilson, LR, Zibik, EA, Green, RP, Cockburn, JW, Steer, MJ, Airey, RJ, Hopkinson, M, Offermans, P, Koenraad, PM & Wolter, JH 2009, InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. in 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Institute of Electrical and Electronics Engineers, Piscataway, blz. 248-250, 2005 Conference on Lasers and Electro-Optics (CLEO® 2005), Baltimore, Maryland, Verenigde Staten van Amerika, 22/05/05. https://doi.org/10.1109/CLEO.2005.201741

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm. / Revin, D.G.; Wilson, L.R.; Zibik, E.A. et al.
2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1. Piscataway: Institute of Electrical and Electronics Engineers, 2009. blz. 248-250.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

AU - Revin, D.G.

AU - Wilson, L.R.

AU - Zibik, E.A.

AU - Green, R.P.

AU - Cockburn, J.W.

AU - Steer, M.J.

AU - Airey, R.J.

AU - Hopkinson, M.

AU - Offermans, P.

AU - Koenraad, P.M.

AU - Wolter, J.H.

PY - 2009

Y1 - 2009

N2 - We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

AB - We report the first realization of In0.53Ga0.47 As/AlAs0.56Sb0.44 quantum cascade lasers grown on InP substrates. Stable optical and electrical characteristics as well as good structural quality of epitaxial layers demonstrate the significant potential of this system

U2 - 10.1109/CLEO.2005.201741

DO - 10.1109/CLEO.2005.201741

M3 - Conference contribution

SN - 1-55752-795-4

SP - 248

EP - 250

BT - 2005 Conference on Lasers and Electro-Optics (CLEO) : May 22 - 27, 2005, Baltimore, MD : vol. 1

PB - Institute of Electrical and Electronics Engineers

CY - Piscataway

T2 - 2005 Conference on Lasers and Electro-Optics (CLEO® 2005)

Y2 - 22 May 2005 through 27 May 2005

ER -

InGaAs-AlAsSb quantum cascade lasers emitting at 4.4 µm

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