Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

C.H.L. Weijtens

doi:10.1149/1.2085429

Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

C.H.L. Weijtens

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

37 Citaten (Scopus)

Samenvatting

The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

Originele taal-2	Engels
Pagina's (van-tot)	3432-3434
Aantal pagina's	3
Tijdschrift	Journal of the Electrochemical Society
Volume	138
Nummer van het tijdschrift	11
DOI's	https://doi.org/10.1149/1.2085429
Status	Gepubliceerd - 1 jan. 1991
Extern gepubliceerd	Ja

Duurzame ontwikkelingsdoelstellingen van de VN

Deze output draagt bij aan de volgende duurzame ontwikkelingsdoelstelling(en)

Toegang tot document

10.1149/1.2085429

Andere bestanden en links

Link to publication in Scopus

Citeer dit

@article{311dde37517e498ab2809f8c5fcac5a6,

title = "Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide",

abstract = "The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.",

author = "C.H.L. Weijtens",

year = "1991",

month = jan,

day = "1",

doi = "10.1149/1.2085429",

language = "English",

volume = "138",

pages = "3432--3434",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

AU - Weijtens, C.H.L.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

AB - The effect of the deposition temperature and the temperature during rapid thermal annealing on the electrical properties of reactive-magnetron-sputtered indium tin oxide (ITO) layers is described. The relations observed are explained in terms of the defect chemistry of ITO.

UR - http://www.scopus.com/inward/record.url?scp=0026255394&partnerID=8YFLogxK

U2 - 10.1149/1.2085429

DO - 10.1149/1.2085429

M3 - Article

AN - SCOPUS:0026255394

SN - 0013-4651

VL - 138

SP - 3432

EP - 3434

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 11

ER -

Influence of the deposition and anneal temperature on the electrical properties of indium tin oxide

Samenvatting

Duurzame ontwikkelingsdoelstellingen van de VN

Toegang tot document

Andere bestanden en links

Vingerafdruk

Citeer dit