Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

J.M. Ulloa Herrero; S. Anantathanasarn; P.J. Veldhoven, van; P.M. Koenraad; R. Nötzel

doi:10.1063/1.2884692

Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

J.M. Ulloa Herrero, S. Anantathanasarn, P.J. Veldhoven, van, P.M. Koenraad, R. Nötzel

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs/InGaAsP/InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As/P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As/P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.

Originele taal-2	Engels
Artikelnummer	083103
Pagina's (van-tot)	083103-1/3
Aantal pagina's	3
Tijdschrift	Applied Physics Letters
Volume	92
Nummer van het tijdschrift	8
DOI's	https://doi.org/10.1063/1.2884692
Status	Gepubliceerd - 2008

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Ulloa Herrero, J. M., Anantathanasarn, S., Veldhoven, van, P. J., Koenraad, P. M., & Nötzel, R. (2008). Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy. Applied Physics Letters, 92(8), 083103-1/3. Article 083103. https://doi.org/10.1063/1.2884692

@article{fddfdb28ada94adfba0925a2bd69f11c,

title = "Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy",

abstract = "Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs/InGaAsP/InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As/P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As/P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.",

author = "{Ulloa Herrero}, J.M. and S. Anantathanasarn and {Veldhoven, van}, P.J. and P.M. Koenraad and R. N{\"o}tzel",

year = "2008",

doi = "10.1063/1.2884692",

language = "English",

volume = "92",

pages = "083103--1/3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

}

Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy. / Ulloa Herrero, J.M.; Anantathanasarn, S.; Veldhoven, van, P.J. et al.
In: Applied Physics Letters, Vol. 92, Nr. 8, 083103, 2008, blz. 083103-1/3.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

TY - JOUR

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AU - Ulloa Herrero, J.M.

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AU - Veldhoven, van, P.J.

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AU - Nötzel, R.

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AB - Cross-sectional scanning tunneling microscopy is used to study at the atomic scale how the structural properties of InAs/InGaAsP/InP quantum dots (QDs) are modified when an ultrathin (0–1.5 ML) GaAs interlayer is inserted underneath the QDs. Deposition of the GaAs interlayer suppresses the influence of the As/P exchange reaction on QD formation and leads to a planarized QD growth surface. A shape transition from quantum dashes, which are strongly dissolved during capping, to well defined QDs takes place when increasing the GaAs interlayer thickness between 0 and 1.0 ML. Moreover, the GaAs interlayer allows the control of the As/P exchange reaction, reducing the QD height for increased GaAs thicknesses above 1.0 ML, and decreases the QD composition intermixing, producing almost pure InAs QDs.

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DO - 10.1063/1.2884692

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SN - 0003-6951

VL - 92

SP - 083103-1/3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

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Influence of an ultrathin GaAs interlayer on the structural properties of InAs/InGaAsP/InP (001) quantum dots investigated by cross-sectional scanning tunneling microscopy

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