Indium phosphide based membrane photodetector for optical interconnects on silicon

P.R.A. Binetti, X.J.M. Leijtens, T. Vries, de, Y.S. Oei, O. Raz, L. Di Cioccio, J.-M. Fédéli, C. Lagahe, R. Orobtchouk, J. Van Campenhout, D. Thourhout, Van, P.J. Veldhoven, van, R. Nötzel, M.K. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

6 Citaten (Scopus)
90 Downloads (Pure)

Samenvatting

We have designed, fabricated and characterized an InP-based membrane photodetector on an SOI wafer containing a Si-wiring photonic circuit. New results on RF characterization up to 20 GHz are presented. The detector fabrication is compatible with wafer scale processing steps, guaranteeing compatibility towards future generation electronic IC processing.
Originele taal-2Engels
TitelProceedings of the 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008), 9-13 November 2008, Newport Beach, California USA
Plaats van productiePiscataway
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's302-303
ISBN van geprinte versie978-1-4244-1931-9
DOI's
StatusGepubliceerd - 2008

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