Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators

Marija Trajkovic (Corresponding author), Fabrice Blache, Helene Debregeas, Kevin Williams, Xaveer Leijtens

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Uittreksel

We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block (BB) is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low DC bias voltage below 1 V at increased temperature, as well as operation in a semi-cooled environment, tested in the range of 20−60∘C . Furthermore, we improve the intrinsic S-parameter response with a co-design circuit. The intrinsic 3-dB bandwidth of a 100 μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three time speed increase of the existing platform, from previously offered 9 GHz (using an electro-optical modulator) to 24 GHz shown in this work.
Originele taal-2Engels
Artikelnummer8701484
Aantal pagina's8
TijdschriftIEEE Journal of Selected Topics in Quantum Electronics
Volume25
Nummer van het tijdschrift5
Vroegere onlinedatum29 apr 2019
DOI's
StatusGepubliceerd - 1 sep 2019

Vingerafdruk

Modulators
modulators
platforms
high speed
Bandwidth
bandwidth
Light modulators
Scattering parameters
Foundries
foundries
Bias voltage
layouts
extinction
direct current
Networks (circuits)
electric potential
Temperature

Citeer dit

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abstract = "We report high speed electro-absorption modulators (EAMs), designed, fabricated and characterized within an open access generic foundry process. The EAM as a new building block (BB) is optimized in the existing platform, in which other BBs are established. By optimizing the EAM design layout, we show a static extinction ratio (static ER) of 18 dB, a low DC bias voltage below 1 V at increased temperature, as well as operation in a semi-cooled environment, tested in the range of 20−60∘C . Furthermore, we improve the intrinsic S-parameter response with a co-design circuit. The intrinsic 3-dB bandwidth of a 100 μm-long EAM is 17 GHz. When measured with the EAM submount design, it is increased to 24 GHz. Simultaneously, the return loss bandwidth is improved by a factor of 2.5 staying below -10 dB up to 20 GHz. Through the realization of the EAM submount design we achieve a three time speed increase of the existing platform, from previously offered 9 GHz (using an electro-optical modulator) to 24 GHz shown in this work.",
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Increasing the speed of an InP-based integration platform by introducing high speed electro-absorption modulators. / Trajkovic, Marija (Corresponding author); Blache, Fabrice; Debregeas, Helene; Williams, Kevin; Leijtens, Xaveer.

In: IEEE Journal of Selected Topics in Quantum Electronics, Vol. 25, Nr. 5, 8701484, 01.09.2019.

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

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