InAs/InP self-assembled quantum dots: wavelength tuning and optical nonlinearities

R. Nötzel, J.E.M. Haverkort

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10 Citaten (Scopus)
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Quantum dots (QDs, i.e., semiconductor nanocrystals) can be formed by spontaneous self-assembly during epitaxial growth of lattice-mismatched semiconductor systems. InAs QDs embedded in GaInAsP on InP are introduced, which can be continuously wavelength-tuned over the 1.55 mm region by inserting ultrathin GaAs or GaP interlayers below them. We subsequently introduce a state-filling optical nonlinearity, which only requires two electron-hole pairs per QD. We employ this nonlinearity for all-optical switching using a Mach-Zehnder interferometric switch. We find a switching energy as low as 6 fJ. [on SciFinder (R)]
Originele taal-2Engels
Pagina's (van-tot)327-334
TijdschriftAdvanced Functional Materials
Nummer van het tijdschrift3
StatusGepubliceerd - 2006

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