InAs/InP quantum dots emitting in the wavelength region by inserting ultrathin GaAs and GaP interlayers

Q. Gong, R. Nötzel, P.J. Veldhoven, van, J.H. Wolter

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@article{b632c3597e89461cab01eca83d50070f,

title = "InAs/InP quantum dots emitting in the wavelength region by inserting ultrathin GaAs and GaP interlayers",

author = "Q. Gong and R. N{\"o}tzel and \{Veldhoven, van\}, P.J. and J.H. Wolter",

year = "2005",

doi = "10.1016/j.jcrysgro.2004.12.056",

language = "English",

volume = "278",

pages = "67--71",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - InAs/InP quantum dots emitting in the wavelength region by inserting ultrathin GaAs and GaP interlayers

AU - Gong, Q.

AU - Nötzel, R.

AU - Veldhoven, van, P.J.

AU - Wolter, J.H.

PY - 2005

Y1 - 2005

U2 - 10.1016/j.jcrysgro.2004.12.056

DO - 10.1016/j.jcrysgro.2004.12.056

M3 - Article

SN - 0022-0248

VL - 278

SP - 67

EP - 71

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -