In situ spectroscopic ellipsometry for atomic layer deposition

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The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaNx, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.
Originele taal-2Engels
TitelSVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009
Plaats van productieSanta Clara, CA, USA
Pagina's61-66
StatusGepubliceerd - 2009
Evenementconference, 52nd Annual Technical Conference, Santa Clara, CA, May 9-14, 2009 - Santa Clara, Verenigde Staten van Amerika
Duur: 9 mei 200914 mei 2009

Publicatie series

NaamSociety of Vacuum Coaters. Annual Technical Conference Proceedings
Volume505
ISSN van geprinte versie0737-5921

Congres

Congresconference, 52nd Annual Technical Conference, Santa Clara, CA, May 9-14, 2009
LandVerenigde Staten van Amerika
StadSanta Clara
Periode9/05/0914/05/09

Vingerafdruk

atomic layer epitaxy
ellipsometry
cycles
film thickness
nucleation
energy
synthesis
thin films

Citeer dit

Langereis, E., Heil, S. B. S., Knoops, H. C. M., Keuning, W., Sanden, van de, M. C. M., & Kessels, W. M. M. (2009). In situ spectroscopic ellipsometry for atomic layer deposition. In SVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009 (blz. 61-66). (Society of Vacuum Coaters. Annual Technical Conference Proceedings ; Vol. 505). Santa Clara, CA, USA.
Langereis, E. ; Heil, S.B.S. ; Knoops, H.C.M. ; Keuning, W. ; Sanden, van de, M.C.M. ; Kessels, W.M.M. / In situ spectroscopic ellipsometry for atomic layer deposition. SVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009. Santa Clara, CA, USA, 2009. blz. 61-66 (Society of Vacuum Coaters. Annual Technical Conference Proceedings ).
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title = "In situ spectroscopic ellipsometry for atomic layer deposition",
abstract = "The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaNx, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.",
author = "E. Langereis and S.B.S. Heil and H.C.M. Knoops and W. Keuning and {Sanden, van de}, M.C.M. and W.M.M. Kessels",
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Langereis, E, Heil, SBS, Knoops, HCM, Keuning, W, Sanden, van de, MCM & Kessels, WMM 2009, In situ spectroscopic ellipsometry for atomic layer deposition. in SVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009. Society of Vacuum Coaters. Annual Technical Conference Proceedings , vol. 505, Santa Clara, CA, USA, blz. 61-66, Santa Clara, Verenigde Staten van Amerika, 9/05/09.

In situ spectroscopic ellipsometry for atomic layer deposition. / Langereis, E.; Heil, S.B.S.; Knoops, H.C.M.; Keuning, W.; Sanden, van de, M.C.M.; Kessels, W.M.M.

SVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009. Santa Clara, CA, USA, 2009. blz. 61-66 (Society of Vacuum Coaters. Annual Technical Conference Proceedings ; Vol. 505).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademic

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AU - Kessels, W.M.M.

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N2 - The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaNx, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.

AB - The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaNx, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.

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Langereis E, Heil SBS, Knoops HCM, Keuning W, Sanden, van de MCM, Kessels WMM. In situ spectroscopic ellipsometry for atomic layer deposition. In SVC 52nd Annual Technical Conference, Santa Clara Convention Center, Santa Clara, CA, May 9-14, 2009. Santa Clara, CA, USA. 2009. blz. 61-66. (Society of Vacuum Coaters. Annual Technical Conference Proceedings ).