In-situ spectroscopic ellipsometry for atomic layer deposition

Onderzoeksoutput: Bijdrage aan congresOtherAcademic

Samenvatting

The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaNx, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the laye-rby-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions.
Originele taal-2Engels
Aantal pagina's8
StatusGepubliceerd - 2009
Evenementconference; 52nd Society of Vacuum Coaters Annual Technical Conference; 2009-05-01; 2009-05-01 -
Duur: 1 mei 20091 mei 2009

Congres

Congresconference; 52nd Society of Vacuum Coaters Annual Technical Conference; 2009-05-01; 2009-05-01
Periode1/05/091/05/09
Ander52nd Society of Vacuum Coaters Annual Technical Conference

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  • Citeer dit

    Langereis, E., Heil, S. B. S., Knoops, H. C. M., Keuning, W., Sanden, van de, M. C. M., & Kessels, W. M. M. (2009). In-situ spectroscopic ellipsometry for atomic layer deposition. conference; 52nd Society of Vacuum Coaters Annual Technical Conference; 2009-05-01; 2009-05-01, .