In situ electrical resistance measurements of Al-Ge films in the TEM using a modified heating holder

M.A. Verheijen, J.J.T.M. Donkers, J.F.P. Thomassen, J.J. Van den Broek, R.A.F. van der Rijt, M.J.J. Dona, C.M. Smit

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

2 Citaten (Scopus)


A TEM specimen holder has been developed for the measurement of the electrical resistance of a TEM sample as a function of temperature. A Philips TEM heating holder was modified for this purpose. This creates the opportunity to directly correlate changes in the resistance to microstructural changes as a function of temperature. The microstructure of Al-Ge films of several thicknesses has been studied in an in-situ annealing experiment and has been recorded on videotape, while simultaneously acquiring resistance data. These in-situ TEM studies confirm that the irreversible decrease in resistance of these films is caused by crystallisation. During this transition segregation occurs, resulting in crystalline Al and Ge phases.

Originele taal-2Engels
TitelPolycrystalline metal and magnetic thin films -2000 : symposium held April 25-27, 2000, San Francisco, California, USA
RedacteurenB.M. Clemens, L. Gignac, J.M. Maclaren
Plaats van productieWarrendale
UitgeverijMaterials Research Society
ISBN van geprinte versie1-55899-523-4
StatusGepubliceerd - 1 dec. 2000
Extern gepubliceerdJa
EvenementPolycrystalline Metal and Magnetic Thin Films-2000 - San Francisco, CA, Verenigde Staten van Amerika
Duur: 25 apr. 200027 apr. 2000

Publicatie series

NaamMaterials Research Society Symposium - Proceedings
UitgeverijMaterials Research Society
ISSN van geprinte versie0272-9172


CongresPolycrystalline Metal and Magnetic Thin Films-2000
Land/RegioVerenigde Staten van Amerika
StadSan Francisco, CA


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