Samenvatting
This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented
Originele taal-2 | Engels |
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Titel | Conference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006 |
Plaats van productie | Piscataway, NJ, USA |
Uitgeverij | Institute of Electrical and Electronics Engineers |
Pagina's | 4- |
ISBN van geprinte versie | 1-424-40016-3 |
DOI's | |
Status | Gepubliceerd - 2006 |
Evenement | conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 - Duur: 1 jan. 2006 → … |
Congres
Congres | conference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 |
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Periode | 1/01/06 → … |
Ander | WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 |