In situ defect spectroscopy: probing dangling bonds during a-Si:H film growth by subgap absorption

W.M.M. Kessels, I.M.P. Aarts, A.C.R. Pipino, M.C.M. Sanden, van de

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

Samenvatting

This paper describes a novel optical diagnostic that was recently introduced to the field of Si-based thin films for probing defect states such as dangling bonds in a-Si:H. This diagnostic is based on the cavity ringdown spectroscopy (CRDS) technique. When applied in situ or real time during film growth it can provide new insights into the a-Si:H film properties as well as into the fundamental surface processes during growth. In this paper the CRDS technique is described and both the ex situ application on as-deposited a-Si:H films as well as the in situ application during a-Si:H film growth are presented
Originele taal-2Engels
TitelConference record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion. Waikoloa, HI, USA. IEEE Electron Devices Soc. 7-12 May 2006
Plaats van productiePiscataway, NJ, USA
UitgeverijInstitute of Electrical and Electronics Engineers
Pagina's4-
ISBN van geprinte versie1-424-40016-3
DOI's
StatusGepubliceerd - 2006
Evenementconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12 -
Duur: 1 jan. 2006 → …

Congres

Congresconference; WCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12
Periode1/01/06 → …
AnderWCPEC : IEEE World Conference on Photovoltaic Energy Conversion ; 4 (Waikoloa, Hawaii) : 2006.05.07-12

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