In-plane and out-of-plane anisotropic magnetoresistance in Ni80Fe20 thin films

T.G.S.M. Rijks; S.K.J. Lenczowski; R. Coehoorn; W.J.M. Jonge, de

doi:10.1103/PhysRevB.56.362

In-plane and out-of-plane anisotropic magnetoresistance in Ni80Fe20 thin films

T.G.S.M. Rijks
, S.K.J. Lenczowski
, R. Coehoorn
, W.J.M. Jonge, de

Physics of Nanostructures

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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The anisotropic magnetoresistance (AMR) has been measured for Ni80Fe20 thin films, with the magnetization vector rotating in the film plane as well as out of the film plane. The out-of-plane (OF) AMR is found to be considerably larger than the in-plane (IF) effect, and strongly dependent on the degree of texture. In untextured films, the difference between the IP- and the OP-AMR is explained in terms of a dimensionality effect, whereas in (111)-textured films an additional contribution to the OP-AMR is found.

Originele taal-2	Engels
Pagina's (van-tot)	362-366
Aantal pagina's	5
Tijdschrift	Physical Review B: Condensed Matter
Volume	56
Nummer van het tijdschrift	1
DOI's	https://doi.org/10.1103/PhysRevB.56.362
Status	Gepubliceerd - 1997

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@article{992a9cd7d62642578a1e161128f903fa,

title = "In-plane and out-of-plane anisotropic magnetoresistance in Ni80Fe20 thin films",

abstract = "The anisotropic magnetoresistance (AMR) has been measured for Ni80Fe20 thin films, with the magnetization vector rotating in the film plane as well as out of the film plane. The out-of-plane (OF) AMR is found to be considerably larger than the in-plane (IF) effect, and strongly dependent on the degree of texture. In untextured films, the difference between the IP- and the OP-AMR is explained in terms of a dimensionality effect, whereas in (111)-textured films an additional contribution to the OP-AMR is found.",

author = "T.G.S.M. Rijks and S.K.J. Lenczowski and R. Coehoorn and \{Jonge, de\}, W.J.M.",

year = "1997",

doi = "10.1103/PhysRevB.56.362",

language = "English",

volume = "56",

pages = "362--366",

journal = "Physical Review B: Condensed Matter",

issn = "0163-1829",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - In-plane and out-of-plane anisotropic magnetoresistance in Ni80Fe20 thin films

AU - Rijks, T.G.S.M.

AU - Lenczowski, S.K.J.

AU - Coehoorn, R.

AU - Jonge, de, W.J.M.

PY - 1997

Y1 - 1997

N2 - The anisotropic magnetoresistance (AMR) has been measured for Ni80Fe20 thin films, with the magnetization vector rotating in the film plane as well as out of the film plane. The out-of-plane (OF) AMR is found to be considerably larger than the in-plane (IF) effect, and strongly dependent on the degree of texture. In untextured films, the difference between the IP- and the OP-AMR is explained in terms of a dimensionality effect, whereas in (111)-textured films an additional contribution to the OP-AMR is found.

AB - The anisotropic magnetoresistance (AMR) has been measured for Ni80Fe20 thin films, with the magnetization vector rotating in the film plane as well as out of the film plane. The out-of-plane (OF) AMR is found to be considerably larger than the in-plane (IF) effect, and strongly dependent on the degree of texture. In untextured films, the difference between the IP- and the OP-AMR is explained in terms of a dimensionality effect, whereas in (111)-textured films an additional contribution to the OP-AMR is found.

U2 - 10.1103/PhysRevB.56.362

DO - 10.1103/PhysRevB.56.362

M3 - Article

SN - 0163-1829

VL - 56

SP - 362

EP - 366

JO - Physical Review B: Condensed Matter

JF - Physical Review B: Condensed Matter

IS - 1

ER -

In-plane and out-of-plane anisotropic magnetoresistance in Ni80Fe20 thin films

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