Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

W.M.M. Kessels; M.G.H. Boogaarts; J.P.M. Hoefnagels; D.C. Schram; M.C.M. Sanden, van de

doi:10.1116/1.1365131

Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

Plasma & Materials Processing

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From cavity ring down spectroscopy and threshold ionization mass spectrometry measurements in a remote Ar-H/sub 2/-SiH/sub 4/ plasma it is clearly demonstrated that the properties of hydrogenated amorphous silicon (a-Si:H) strongly improve with increasing contribution of SiH/sub 3/ to film growth. The measurements corroborate the proposed dissociation reactions of SiH/sub 4/ for different plasma settings and it is shown that film growth is by far dominated by SiH/sub 3/ under conditions for which solar grade quality a-Si:H at deposition rates up to 10 nm/s has previously been reported

Originele taal-2	Engels
Pagina's (van-tot)	1027-1029
Tijdschrift	Journal of Vacuum Science and Technology A
Volume	19
Nummer van het tijdschrift	3
DOI's	https://doi.org/10.1116/1.1365131
Status	Gepubliceerd - 2001

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title = "Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth",

abstract = "From cavity ring down spectroscopy and threshold ionization mass spectrometry measurements in a remote Ar-H/sub 2/-SiH/sub 4/ plasma it is clearly demonstrated that the properties of hydrogenated amorphous silicon (a-Si:H) strongly improve with increasing contribution of SiH/sub 3/ to film growth. The measurements corroborate the proposed dissociation reactions of SiH/sub 4/ for different plasma settings and it is shown that film growth is by far dominated by SiH/sub 3/ under conditions for which solar grade quality a-Si:H at deposition rates up to 10 nm/s has previously been reported",

author = "W.M.M. Kessels and M.G.H. Boogaarts and J.P.M. Hoefnagels and D.C. Schram and \{Sanden, van de\}, M.C.M.",

year = "2001",

doi = "10.1116/1.1365131",

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T1 - Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

AU - Kessels, W.M.M.

AU - Boogaarts, M.G.H.

AU - Hoefnagels, J.P.M.

AU - Schram, D.C.

AU - Sanden, van de, M.C.M.

PY - 2001

Y1 - 2001

N2 - From cavity ring down spectroscopy and threshold ionization mass spectrometry measurements in a remote Ar-H/sub 2/-SiH/sub 4/ plasma it is clearly demonstrated that the properties of hydrogenated amorphous silicon (a-Si:H) strongly improve with increasing contribution of SiH/sub 3/ to film growth. The measurements corroborate the proposed dissociation reactions of SiH/sub 4/ for different plasma settings and it is shown that film growth is by far dominated by SiH/sub 3/ under conditions for which solar grade quality a-Si:H at deposition rates up to 10 nm/s has previously been reported

AB - From cavity ring down spectroscopy and threshold ionization mass spectrometry measurements in a remote Ar-H/sub 2/-SiH/sub 4/ plasma it is clearly demonstrated that the properties of hydrogenated amorphous silicon (a-Si:H) strongly improve with increasing contribution of SiH/sub 3/ to film growth. The measurements corroborate the proposed dissociation reactions of SiH/sub 4/ for different plasma settings and it is shown that film growth is by far dominated by SiH/sub 3/ under conditions for which solar grade quality a-Si:H at deposition rates up to 10 nm/s has previously been reported

U2 - 10.1116/1.1365131

DO - 10.1116/1.1365131

M3 - Article

SN - 0734-2101

VL - 19

SP - 1027

EP - 1029

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 3

ER -

Improvement of hydrogenated amorphous silicon properties with increasing contribution of SiH3 to film growth

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