Samenvatting
From cavity ring down spectroscopy and threshold ionization mass spectrometry measurements in a remote Ar-H/sub 2/-SiH/sub 4/ plasma it is clearly demonstrated that the properties of hydrogenated amorphous silicon (a-Si:H) strongly improve with increasing contribution of SiH/sub 3/ to film growth. The measurements corroborate the proposed dissociation reactions of SiH/sub 4/ for different plasma settings and it is shown that film growth is by far dominated by SiH/sub 3/ under conditions for which solar grade quality a-Si:H at deposition rates up to 10 nm/s has previously been reported
Originele taal-2 | Engels |
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Pagina's (van-tot) | 1027-1029 |
Tijdschrift | Journal of Vacuum Science and Technology A |
Volume | 19 |
Nummer van het tijdschrift | 3 |
DOI's | |
Status | Gepubliceerd - 2001 |