Implant isolation of AlGaAs multilayer DBR

A.V.P. Coelho; H. Boudinov; T. Lippen, van; H.H. Tan; C. Jagadish

doi:10.1016/j.nimb.2003.12.059

Implant isolation of AlGaAs multilayer DBR

A.V.P. Coelho
, H. Boudinov
, T. Lippen, van
, H.H. Tan
, C. Jagadish

Photonics and Semiconductor Nanophysics

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

9 Citaten (Scopus)

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AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.

Originele taal-2	Engels
Pagina's (van-tot)	381-385
Aantal pagina's	5
Tijdschrift	Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	218
DOI's	https://doi.org/10.1016/j.nimb.2003.12.059
Status	Gepubliceerd - 2004

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10.1016/j.nimb.2003.12.059

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title = "Implant isolation of AlGaAs multilayer DBR",

abstract = "AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.",

author = "A.V.P. Coelho and H. Boudinov and \{Lippen, van\}, T. and H.H. Tan and C. Jagadish",

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T1 - Implant isolation of AlGaAs multilayer DBR

AU - Coelho, A.V.P.

AU - Boudinov, H.

AU - Lippen, van, T.

AU - Tan, H.H.

AU - Jagadish, C.

PY - 2004

Y1 - 2004

N2 - AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.

AB - AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.

U2 - 10.1016/j.nimb.2003.12.059

DO - 10.1016/j.nimb.2003.12.059

M3 - Article

SN - 0168-583X

VL - 218

SP - 381

EP - 385

JO - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

ER -

Implant isolation of AlGaAs multilayer DBR

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