Implant isolation of AlGaAs multilayer DBR

A.V.P. Coelho, H. Boudinov, T. Lippen, van, H.H. Tan, C. Jagadish

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

9 Citaten (Scopus)


AlGaAs distributed Bragg reflector (DBR) structures isolation by proton irradiation was studied. The evolution of n- and p-type DBR structures lateral sheet resistance with the irradiated proton dose was measured. The vertical isolation behavior was also obtained and compared to the lateral one. No significant differences were observed. The implantation maximum energy for these structures was estimated. Thermal stability of DBR vertical isolation was studied. A 500 °C stability was obtained for samples implanted to a dose 2.5 times greater than the threshold dose of isolation.
Originele taal-2Engels
Pagina's (van-tot)381-385
Aantal pagina's5
TijdschriftNuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
StatusGepubliceerd - 2004


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