Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

E.P. Vandamme; D. Schreurs; C.H.J. Dinther, van

doi:10.1002/mmce.1012

Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

E.P. Vandamme, D. Schreurs, C.H.J. Dinther, van

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.

Originele taal-2	Engels
Pagina's (van-tot)	114-120
Aantal pagina's	7
Tijdschrift	International Journal of RF and Microwave Computer-Aided Engineering
Volume	11
Nummer van het tijdschrift	3
DOI's	https://doi.org/10.1002/mmce.1012
Status	Gepubliceerd - 2001
Extern gepubliceerd	Ja

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10.1002/mmce.1012

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title = "Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it",

abstract = "Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.",

author = "E.P. Vandamme and D. Schreurs and {Dinther, van}, C.H.J.",

year = "2001",

doi = "10.1002/mmce.1012",

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Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it. / Vandamme, E.P.; Schreurs, D.; Dinther, van, C.H.J.
In: International Journal of RF and Microwave Computer-Aided Engineering, Vol. 11, Nr. 3, 2001, blz. 114-120.

Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review

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AU - Vandamme, E.P.

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AU - Dinther, van, C.H.J.

PY - 2001

Y1 - 2001

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AB - Apparent degradation of the RF characteristics of silicon MOSFETs was observed under normal operating conditions. We show that it was not caused by intrinsic device degradation but originated from a degradation of the contact resistance between probe and bonding pad. Guidelines, not limited to MOSFETs only, are given that enable accurate S-parameter measurements for RF modelling and reliability assessment.

U2 - 10.1002/mmce.1012

DO - 10.1002/mmce.1012

M3 - Article

SN - 1096-4290

VL - 11

SP - 114

EP - 120

JO - International Journal of RF and Microwave Computer-Aided Engineering

JF - International Journal of RF and Microwave Computer-Aided Engineering

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ER -

Impact of probe-to-pad contact degradation on the high frequency characteristics of RF MOSFETs and guidelines to avoid it

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