Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets

Yifan Jiang, Eline J. de Jong, V. van de Sande, Sasa Gazibegovic, Ghada H.A. Badawy, Erik P.A.M. Bakkers, Sergey M. Frolov (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

5 Citaten (Scopus)
5 Downloads (Pure)

Samenvatting

We study hysteretic magnetoresistance in InSb nanowires due to stray magnetic fields from CoFe micromagnets. Devices without any ferromagnetic components show that the magnetoresistance of InSb nanowires commonly exhibits either a local maximum or local minimum at zero magnetic field. Switching of microstrip magnetizations then results in positive or negative hysteretic dependence as conductance maxima or minima shift with respect to the global external field. Stray fields are found to be in the range of tens of millitesla, comparable to the scale over which the nanowire magnetoresistance develops. We observe that the stray field signal is similar to that obtained in devices with ferromagnetic contacts (spin valves). We perform micromagnetic simulations which are in reasonable agreement with the experiment. The use of locally varying magnetic fields may bring new ideas for Majorana circuits in which nanowire networks require control over field orientation at the nanoscale.
Originele taal-2Engels
Artikelnummer095001
Aantal pagina's7
TijdschriftNanotechnology
Volume32
Nummer van het tijdschrift9
Vroegere onlinedatum8 dec. 2020
DOI's
StatusGepubliceerd - 26 feb. 2021

Vingerafdruk

Duik in de onderzoeksthema's van 'Hysteretic magnetoresistance in nanowire devices due to stray fields induced by micromagnets'. Samen vormen ze een unieke vingerafdruk.

Citeer dit