Hydrogenated amorphous silicon based surface passivation of c-Si at high deposition temperature and rate

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Samenvatting

Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach excellent surface passivation of c-Si wafers, such as a hydrogen-rich and atomically abrupt a-Si:H/c-Si interface forms. From a comparison between surface passivation levels achieved by different deposition methods, delivering a broad range of a-Si:H growth rates, we show that a high a-Si:H deposition rate (~3 nm/s) is crucial in achieving an excellent level of surface passivation at high deposition temperatures (>425 °C) compatible with emerging post-deposition thermal treatments of solar cells.
Originele taal-2Engels
Pagina's (van-tot)206-208
TijdschriftPhysica Status Solidi : Rapid Research Letters
Volume4
Nummer van het tijdschrift8-9
DOI's
StatusGepubliceerd - 2010

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