TY - JOUR
T1 - Hydrogenated amorphous silicon based surface passivation of c-Si at high deposition temperature and rate
AU - Illiberi, A.
AU - Creatore, M.
AU - Kessels, W.M.M.
AU - Sanden, van de, M.C.M.
PY - 2010
Y1 - 2010
N2 - Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach excellent surface passivation of c-Si wafers, such as a hydrogen-rich and atomically abrupt a-Si:H/c-Si interface forms. From a comparison between surface passivation levels achieved by different deposition methods, delivering a broad range of a-Si:H growth rates, we show that a high a-Si:H deposition rate (~3 nm/s) is crucial in achieving an excellent level of surface passivation at high deposition temperatures (>425 °C) compatible with emerging post-deposition thermal treatments of solar cells.
AB - Low substrate temperature during deposition of a-Si:H is considered a necessary condition to reach excellent surface passivation of c-Si wafers, such as a hydrogen-rich and atomically abrupt a-Si:H/c-Si interface forms. From a comparison between surface passivation levels achieved by different deposition methods, delivering a broad range of a-Si:H growth rates, we show that a high a-Si:H deposition rate (~3 nm/s) is crucial in achieving an excellent level of surface passivation at high deposition temperatures (>425 °C) compatible with emerging post-deposition thermal treatments of solar cells.
U2 - 10.1002/pssr.201004234
DO - 10.1002/pssr.201004234
M3 - Article
SN - 1862-6254
VL - 4
SP - 206
EP - 208
JO - Physica Status Solidi : Rapid Research Letters
JF - Physica Status Solidi : Rapid Research Letters
IS - 8-9
ER -