Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study

W.M.M. Kessels; M.C.M. Sanden, van de; R.J. Severens; L.J. IJzendoorn, van; D.C. Schram

Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study

Plasma & Materials Processing

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Samenvatting

The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.

Originele taal-2	Engels
Titel	Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.
Redacteuren	R. Schropp
Pagina's	529-534
Aantal pagina's	6
Status	Gepubliceerd - 1998
Evenement	1998 MRS Spring Meeting & Exhibit - San Francisco, Verenigde Staten van Amerika Duur: 13 apr. 1998 → 17 apr. 1998 https://www.mrs.org/spring1998

Publicatie series

Naam	Materials Research Society Symposium Proceedings
Volume	507
ISSN van geprinte versie	0272-9172

Congres

Congres	1998 MRS Spring Meeting & Exhibit
Land/Regio	Verenigde Staten van Amerika
Stad	San Francisco
Periode	13/04/98 → 17/04/98
Ander	MRS Spring Meeting ; 16 (San Francisco, Calif.) : 1998.04.14-17
Internet adres	https://www.mrs.org/spring1998

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Kessels, W. M. M., Sanden, van de, M. C. M., Severens, R. J., IJzendoorn, van, L. J., & Schram, D. C. (1998). Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. In R. Schropp (editor), Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A. (blz. 529-534). (Materials Research Society Symposium Proceedings; Vol. 507).

Kessels, W.M.M. ; Sanden, van de, M.C.M. ; Severens, R.J. et al. / Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. redacteur / R. Schropp. 1998. blz. 529-534 (Materials Research Society Symposium Proceedings).

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title = "Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study",

abstract = "The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.",

author = "W.M.M. Kessels and \{Sanden, van de\}, M.C.M. and R.J. Severens and \{IJzendoorn, van\}, L.J. and D.C. Schram",

year = "1998",

language = "English",

isbn = "1-558-99413-0",

series = "Materials Research Society Symposium Proceedings",

pages = "529--534",

editor = "R. Schropp",

booktitle = "Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.",

note = "1998 MRS Spring Meeting \& Exhibit ; Conference date: 13-04-1998 Through 17-04-1998",

url = "https://www.mrs.org/spring1998",

}

Kessels, WMM , Sanden, van de, MCM, Severens, RJ, IJzendoorn, van, LJ & Schram, DC 1998, Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. in R Schropp (reds.), Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. Materials Research Society Symposium Proceedings, vol. 507, blz. 529-534, 1998 MRS Spring Meeting & Exhibit, San Francisco, California, Verenigde Staten van Amerika, 13/04/98.

Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. / Kessels, W.M.M.; Sanden, van de, M.C.M.; Severens, R.J. et al.
Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. reds. / R. Schropp. 1998. blz. 529-534 (Materials Research Society Symposium Proceedings; Vol. 507).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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T1 - Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

AU - Severens, R.J.

AU - IJzendoorn, van, L.J.

AU - Schram, D.C.

PY - 1998

Y1 - 1998

N2 - The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.

AB - The hydrogen and silicon density of a-Si:H-films deposited by an expanding thermal plasma have been investigated for a wide range of substrate temperatures and growth rates by infrared absorption spectroscopy in combination with elastic recoil detection and Rutherford backscattering. The study reveals that, despite the increasing atomic hydrogen interaction and high substrate temperatures, the a-Si:H remains purely amorphous at low growth rates as concluded from Raman spectroscopy. Additionally, the infrared spectroscopy proportionality constants of the silicon-hydrogen and silicon-deuterium bondings have been recalibrated.

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M3 - Conference contribution

SN - 1-558-99413-0

T3 - Materials Research Society Symposium Proceedings

SP - 529

EP - 534

BT - Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.

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T2 - 1998 MRS Spring Meeting & Exhibit

Y2 - 13 April 1998 through 17 April 1998

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Kessels WMM , Sanden, van de MCM, Severens RJ, IJzendoorn, van LJ , Schram DC. Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study. In Schropp R, redacteur, Amorphous and microcrystalline silicon technology - 1998 : symposium held April 14 - 17, 1998, San Francisco, California, U.S.A.. 1998. blz. 529-534. (Materials Research Society Symposium Proceedings).

Hydrogen in a-Si:H deposited by an expanding thermal plasma : a temperature, growth rate and isotope study

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