Huang-Rhys parameter of InAs/GaAs self-assembled quantum dots obtained from micro-PL experiments

A.W.E. Minnaert, A.Y. Silov, J.H. Wolter

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We show that niicro-photolurninescence experiments allow unambiguous identification of the one-phonon sjdebands for the individual quantum dots. This makes the appropriate measurement of Huang-Rhys parameter for a single quantum dot possible. The measured Huang-Rhys parameter is as large as ±0.52 for the small sized lnAs/GaAs self-assembled quantum dots with the photoluminescence peak position at 1.313 eV. This value is close to the value calculated in the limiting case of our theoretical framework.
Originele taal-2Engels
TitelProceedings of the 25th Int. Conf. on the Physics of Semiconductors, 17-22 September 2000, Osaka, Japan, Part II
RedacteurenN. Miura, T. Ando
Plaats van productieBerlin
UitgeverijSpringer
Pagina's1235-1236
ISBN van geprinte versie3-540-41778-8
StatusGepubliceerd - 2001
Evenement25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan - Osaka, Japan
Duur: 17 sep 200022 sep 2000

Publicatie series

NaamSpringer Proceedings in Physics
Volume87
ISSN van geprinte versie0930-8989

Congres

Congres25th International Conference on the Physics of Semiconductors, September 17-22, 2000, Osaka, Japan
LandJapan
StadOsaka
Periode17/09/0022/09/00
Ander25th Int. Conf. on the Physics of Semiconductors. Osaka, Japan

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  • Citeer dit

    Minnaert, A. W. E., Silov, A. Y., & Wolter, J. H. (2001). Huang-Rhys parameter of InAs/GaAs self-assembled quantum dots obtained from micro-PL experiments. In N. Miura, & T. Ando (editors), Proceedings of the 25th Int. Conf. on the Physics of Semiconductors, 17-22 September 2000, Osaka, Japan, Part II (blz. 1235-1236). (Springer Proceedings in Physics; Vol. 87). Springer.