Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks; E.A.E. Zwaal; J.G.A. Dubois; F.A.P. Blom; J.H. Wolter

Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

P. Hendriks, E.A.E. Zwaal, J.G.A. Dubois, F.A.P. Blom, J.H. Wolter

Photonics and Semiconductor Nanophysics

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.

Originele taal-2	Engels
Titel	Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2
Redacteuren	E.M. Anastassakis, J.D. Joannopoulos
Plaats van productie	London
Uitgeverij	World Scientific
Pagina's	1605-1608
ISBN van geprinte versie	981-02-0290-3
Status	Gepubliceerd - 1990

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Hendriks, P., Zwaal, E. A. E., Dubois, J. G. A., Blom, F. A. P., & Wolter, J. H. (1990). Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures. In E. M. Anastassakis, & J. D. Joannopoulos (editors), Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2 (blz. 1605-1608). World Scientific.

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title = "Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures",

abstract = "A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.",

author = "P. Hendriks and E.A.E. Zwaal and J.G.A. Dubois and F.A.P. Blom and J.H. Wolter",

year = "1990",

language = "English",

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pages = "1605--1608",

editor = "E.M. Anastassakis and J.D. Joannopoulos",

booktitle = "Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2",

publisher = "World Scientific",

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Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures. / Hendriks, P.; Zwaal, E.A.E.; Dubois, J.G.A. et al.
Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2. uitgave / E.M. Anastassakis; J.D. Joannopoulos. London: World Scientific, 1990. blz. 1605-1608.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

AU - Hendriks, P.

AU - Zwaal, E.A.E.

AU - Dubois, J.G.A.

AU - Blom, F.A.P.

AU - Wolter, J.H.

PY - 1990

Y1 - 1990

N2 - A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.

AB - A new mechanism to understand time—dependent features in the conduction of a two-dimensional electron gas (2 DEC) in high electric fields is proposed and discussed. The mechanism is based on the idea that not only the properties of the GaAs/AlGaAs heterostructure have to be included, but also the properties of the transition from the ohmic contact to the heterostructure. If high enough electric fields are applied, electrons can move from the contact into both the AlCaAs and the 2 DEC. Time—resolved experiments are shown which confirm this hypothesis.

M3 - Conference contribution

SN - 981-02-0290-3

SP - 1605

EP - 1608

BT - Proceedings of the 20th Int.Conf. on the Physics of Semiconductors, Thessaloniki, Greece, August 6-10 1990, vol. 2

A2 - Anastassakis, E.M.

A2 - Joannopoulos, J.D.

PB - World Scientific

CY - London

ER -

Hot electron transport in gallium arsenide/aluminum gallium arsenide heterostructures

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