Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

M. Brauns, J. Ridderbos, A. Li, W.G. van der Wiel, E.P.A.M. Bakkers, F. Zwanenburg

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

13 Citaten (Scopus)
107 Downloads (Pure)


We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing. Published by AIP Publishing.
Originele taal-2Engels
Pagina's (van-tot)1-4
TijdschriftApplied Physics Letters
Nummer van het tijdschrift14
StatusGepubliceerd - 3 okt 2016


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