Highly Tensile-Strained Self-Assembled Ge Quantum Dots on InP Substrates for Integrated Light Sources

Qimiao Chen, Liyao Zhang, Yuxin Song (Corresponding author), Xiren Chen, Sebastian Koelling, Zhenpu Zhang, Yaoyao Li, Paul M. Koenraad, Jun Shao, Chuan Seng Tan, Shumin Wang, Qian Gong

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Samenvatting

Highly tensile-strained Ge quantum dots (TS-Ge-QDs) emitting structures with different size were successfully grown on InP substrates by molecular beam epitaxy. Dislocation-free TS-Ge-QDs were observed by transmission electron microscopy. Finite element modeling indicates a maximum tensile strain of 4.5% in the Ge QDs, which is much larger than the required strain to achieve direct band gap conversion of Ge based on theoretical prediction. Photoluminescence (PL) from a direct band-gap-like transition of TS-Ge-QDs with a peak energy of 0.796 eV was achieved and confirmed by the etch depth-dependent PL, temperature-dependent PL, and excitation-power-dependent PL. In addition, a strong defect-related peak of 1 eV was observed at room temperature. The band structure of the TS-Ge-QDs emitting structures was calculated to support the experimental results of PL spectra. Achieving PL from direct band-gap-like transitions of TS-Ge-QDs provides encouraging evidence of this promising highly tensile strained semiconductor-nanostructure-based platform for future photonics applications such as integrated light sources.

Originele taal-2Engels
Pagina's (van-tot)897-906
Aantal pagina's10
TijdschriftACS Applied Nano Materials
Volume4
Nummer van het tijdschrift1
DOI's
StatusGepubliceerd - 22 jan 2021

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