Highly chemical reactive ion etching of GaN and its influence on Schottky contacts

F. Karouta, B. Jacobs, I. Moerman, K. Jacobs, J.L. Weyher, S. Porowski, R. Crane, P.R. Hageman

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

Originele taal-2	Engels
Titel	Materials Research Society fall Meeting, Symposium W, Paper # W11.76
Status	Gepubliceerd - 1999
Evenement	1999 MRS Fall Meeting & Exhibit - Boston, Verenigde Staten van Amerika Duur: 29 nov. 1999 → 3 dec. 1999 https://www.mrs.org/fall1999

Congres	1999 MRS Fall Meeting & Exhibit
Land/Regio	Verenigde Staten van Amerika
Stad	Boston
Periode	29/11/99 → 3/12/99
Ander	Materials Research Society Fall Meeting 1999, Boston
Internet adres	https://www.mrs.org/fall1999

Citeer dit

@inproceedings{a4b6d0b041be41519638f1b5c38dd020,

title = "Highly chemical reactive ion etching of GaN and its influence on Schottky contacts",

author = "F. Karouta and B. Jacobs and I. Moerman and K. Jacobs and J.L. Weyher and S. Porowski and R. Crane and P.R. Hageman",

year = "1999",

language = "English",

booktitle = "Materials Research Society fall Meeting, Symposium W, Paper # W11.76",

note = "1999 MRS Fall Meeting & Exhibit ; Conference date: 29-11-1999 Through 03-12-1999",

url = "https://www.mrs.org/fall1999",

}

TY - GEN

T1 - Highly chemical reactive ion etching of GaN and its influence on Schottky contacts

AU - Karouta, F.

AU - Jacobs, B.

AU - Moerman, I.

AU - Jacobs, K.

AU - Weyher, J.L.

AU - Porowski, S.

AU - Crane, R.

AU - Hageman, P.R.

PY - 1999

Y1 - 1999

M3 - Conference contribution

BT - Materials Research Society fall Meeting, Symposium W, Paper # W11.76

T2 - 1999 MRS Fall Meeting & Exhibit

Y2 - 29 November 1999 through 3 December 1999

ER -