High-resolution x-ray diffration of self-organized step bunches of Si(1-x)Ge(x) grown on (113)-oriented Si

J. Stangl, V. Holy, A.A. Darhuber, P. Mikulik, G. Bauer, J. Zhu, K. Brunner, G. Abstreiter

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

    4 Citaten (Scopus)

    Samenvatting

    We present investigations of a highly regular terraced surface and interface structure of Si/SiGe multilayers on Si (113) by x-ray diffraction, x-ray reflectivity and atomic force microscopy. A regular array of step bunches with lateral periods of several hundred nanometres is formed during the growth of the Si/Si1-xGex multilayers. X-ray diffraction patterns are simulated using the elastic Green function approach for the evaluation of the strain fields associated with the step edges, taking into account the relaxation towards the free surface. In addition to the terrace structure, a surface waviness on the micrometre length scale is present, leading to a modulation of the terrace widths.
    Originele taal-2Engels
    Pagina's (van-tot)71-74
    TijdschriftJournal of Physics D: Applied Physics
    Volume32
    Nummer van het tijdschrift10A
    DOI's
    StatusGepubliceerd - 1999

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