High-rate anisotropic silicon etching with the expanding thermal plasma technique

M.A. Blauw; P.J.W. van Lankvelt; F. Roozeboom; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1149/1.2357269

High-rate anisotropic silicon etching with the expanding thermal plasma technique

M.A. Blauw, P.J.W. van Lankvelt, F. Roozeboom, W.M.M. Kessels, M.C.M. Sanden, van de

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

1 Citaat (Scopus)

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Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.

Originele taal-2	Engels
Titel	210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico
Redacteuren	G. Hunter, S. Akbar
Uitgeverij	ECS
Pagina's	291-298
DOI's	https://doi.org/10.1149/1.2357269
Status	Gepubliceerd - 2006
Evenement	210th Electrochemical Society Meeting (ECS 2006): 2006 Joint Internatio0nal Meeting - Cancún, Mexico Duur: 29 okt. 2006 → 3 nov. 2006 https://www.electrochem.org/210

Publicatie series

Naam	ECS Transactions
Volume	3
ISSN van geprinte versie	1938-6737

Congres

Congres	210th Electrochemical Society Meeting (ECS 2006)
Land/Regio	Mexico
Stad	Cancún
Periode	29/10/06 → 3/11/06
Ander	210th ECS Meeting
Internet adres	https://www.electrochem.org/210

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Blauw, M. A., van Lankvelt, P. J. W., Roozeboom, F., Kessels, W. M. M., & Sanden, van de, M. C. M. (2006). High-rate anisotropic silicon etching with the expanding thermal plasma technique. In G. Hunter, & S. Akbar (editors), 210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico (blz. 291-298). (ECS Transactions; Vol. 3). ECS. https://doi.org/10.1149/1.2357269

@inproceedings{befce8f017e044f880130b372a387de6,

title = "High-rate anisotropic silicon etching with the expanding thermal plasma technique",

abstract = "Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.",

author = "M.A. Blauw and {van Lankvelt}, P.J.W. and F. Roozeboom and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2006",

doi = "10.1149/1.2357269",

language = "English",

series = "ECS Transactions",

publisher = "ECS",

pages = "291--298",

editor = "G. Hunter and S. Akbar",

booktitle = "210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico",

note = "210th Electrochemical Society Meeting (ECS 2006) : 2006 Joint Internatio0nal Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

url = "https://www.electrochem.org/210",

}

Blauw, MA, van Lankvelt, PJW, Roozeboom, F, Kessels, WMM & Sanden, van de, MCM 2006, High-rate anisotropic silicon etching with the expanding thermal plasma technique. in G Hunter & S Akbar (uitgave), 210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico. ECS Transactions, vol. 3, ECS, blz. 291-298, 210th Electrochemical Society Meeting (ECS 2006), Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2357269

High-rate anisotropic silicon etching with the expanding thermal plasma technique. / Blauw, M.A.; van Lankvelt, P.J.W.; Roozeboom, F. et al.
210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico. uitgave / G. Hunter; S. Akbar. ECS, 2006. blz. 291-298 (ECS Transactions; Vol. 3).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - High-rate anisotropic silicon etching with the expanding thermal plasma technique

AU - Blauw, M.A.

AU - van Lankvelt, P.J.W.

AU - Roozeboom, F.

AU - Kessels, W.M.M.

AU - Sanden, van de, M.C.M.

PY - 2006

Y1 - 2006

N2 - Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.

AB - Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.

U2 - 10.1149/1.2357269

DO - 10.1149/1.2357269

M3 - Conference contribution

T3 - ECS Transactions

SP - 291

EP - 298

BT - 210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico

A2 - Hunter, G.

A2 - Akbar, S.

PB - ECS

T2 - 210th Electrochemical Society Meeting (ECS 2006)

Y2 - 29 October 2006 through 3 November 2006

ER -

High-rate anisotropic silicon etching with the expanding thermal plasma technique

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