High-rate anisotropic silicon etching with the expanding thermal plasma technique

M.A. Blauw, P.J.W. van Lankvelt, F. Roozeboom, W.M.M. Kessels, M.C.M. Sanden, van de

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

1 Citaat (Scopus)

Samenvatting

Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.
Originele taal-2Engels
Titel210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico
RedacteurenG. Hunter, S. Akbar
UitgeverijECS
Pagina's291-298
DOI's
StatusGepubliceerd - 2006
Evenement210th Electrochemical Society Meeting (ECS 2006): 2006 Joint Internatio0nal Meeting - Cancún, Mexico
Duur: 29 okt 20063 nov 2006
https://www.electrochem.org/210

Publicatie series

NaamECS Transactions
Volume3
ISSN van geprinte versie1938-6737

Congres

Congres210th Electrochemical Society Meeting (ECS 2006)
LandMexico
StadCancún
Periode29/10/063/11/06
Ander210th ECS Meeting
Internet adres

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