High-rate anisotropic silicon etching with the expanding thermal plasma technique

M.A. Blauw; P.J.W. van Lankvelt; F. Roozeboom; W.M.M. Kessels; M.C.M. Sanden, van de

doi:10.1149/1.2357269

High-rate anisotropic silicon etching with the expanding thermal plasma technique

M.A. Blauw, P.J.W. van Lankvelt, F. Roozeboom, W.M.M. Kessels, M.C.M. Sanden, van de

Plasma & Materials Processing

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

1 Citaat (Scopus)

Samenvatting

Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.

Originele taal-2	Engels
Titel	210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico
Redacteuren	G. Hunter, S. Akbar
Uitgeverij	ECS
Pagina's	291-298
DOI's	https://doi.org/10.1149/1.2357269
Status	Gepubliceerd - 2006
Evenement	210th Electrochemical Society Meeting (ECS 2006): 2006 Joint Internatio0nal Meeting - Cancún, Mexico Duur: 29 okt 2006 → 3 nov 2006 https://www.electrochem.org/210

Publicatie series

Naam	ECS Transactions
Volume	3
ISSN van geprinte versie	1938-6737

Congres

Congres	210th Electrochemical Society Meeting (ECS 2006)
Land	Mexico
Stad	Cancún
Periode	29/10/06 → 3/11/06
Ander	210th ECS Meeting
Internet adres	https://www.electrochem.org/210

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Citeer dit

Blauw, M. A., van Lankvelt, P. J. W., Roozeboom, F., Kessels, W. M. M., & Sanden, van de, M. C. M. (2006). High-rate anisotropic silicon etching with the expanding thermal plasma technique. In G. Hunter, & S. Akbar (editors), 210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico (blz. 291-298). (ECS Transactions; Vol. 3). ECS. https://doi.org/10.1149/1.2357269

@inproceedings{befce8f017e044f880130b372a387de6,

title = "High-rate anisotropic silicon etching with the expanding thermal plasma technique",

abstract = "Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.",

author = "M.A. Blauw and {van Lankvelt}, P.J.W. and F. Roozeboom and W.M.M. Kessels and {Sanden, van de}, M.C.M.",

year = "2006",

doi = "10.1149/1.2357269",

language = "English",

series = "ECS Transactions",

publisher = "ECS",

pages = "291--298",

editor = "G. Hunter and S. Akbar",

booktitle = "210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico",

note = "210th Electrochemical Society Meeting (ECS 2006) : 2006 Joint Internatio0nal Meeting ; Conference date: 29-10-2006 Through 03-11-2006",

url = "https://www.electrochem.org/210",

}

Blauw, MA, van Lankvelt, PJW, Roozeboom, F , Kessels, WMM & Sanden, van de, MCM 2006, High-rate anisotropic silicon etching with the expanding thermal plasma technique. in G Hunter & S Akbar (redactie), 210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico. ECS Transactions, vol. 3, ECS, blz. 291-298, 210th Electrochemical Society Meeting (ECS 2006), Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2357269

High-rate anisotropic silicon etching with the expanding thermal plasma technique. / Blauw, M.A.; van Lankvelt, P.J.W.; Roozeboom, F.; Kessels, W.M.M.; Sanden, van de, M.C.M.

210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico. redactie / G. Hunter; S. Akbar. ECS, 2006. blz. 291-298 (ECS Transactions; Vol. 3).

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

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AU - Sanden, van de, M.C.M.

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N2 - Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.

AB - Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.

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