Samenvatting
Deep anisotropic silicon etching with the expanding thermal plasma (ETP) technique using fluorine-based chemistries was demonstrated for the first time. The ETP technique has a remote high-density plasma source and a good control of the downstream plasma chemistry. High etch rates between 4 and 12 µm per min were obtained while feature profiles were competitive to those obtained with the widely used inductively coupled plasma (ICP) reactors. Therefore, this novel deep anisotropic silicon etching process is an attractive, alternative fabrication technology for micromechanical devices, trench capacitors, and 3D-interconnects.
Originele taal-2 | Engels |
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Titel | 210th ECS Meeting October 29-November 3, 2006 , Cancun, Mexico |
Redacteuren | G. Hunter, S. Akbar |
Uitgeverij | ECS |
Pagina's | 291-298 |
DOI's | |
Status | Gepubliceerd - 2006 |
Evenement | 210th Electrochemical Society Meeting (ECS 2006): 2006 Joint Internatio0nal Meeting - Cancún, Mexico Duur: 29 okt. 2006 → 3 nov. 2006 https://www.electrochem.org/210 |
Publicatie series
Naam | ECS Transactions |
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Volume | 3 |
ISSN van geprinte versie | 1938-6737 |
Congres
Congres | 210th Electrochemical Society Meeting (ECS 2006) |
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Land/Regio | Mexico |
Stad | Cancún |
Periode | 29/10/06 → 3/11/06 |
Ander | 210th ECS Meeting |
Internet adres |