Samenvatting
High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.
| Originele taal-2 | Engels |
|---|---|
| Pagina's (van-tot) | 3575-3582 |
| Aantal pagina's | 8 |
| Tijdschrift | Nano Letters |
| Volume | 19 |
| Nummer van het tijdschrift | 6 |
| DOI's | |
| Status | Gepubliceerd - 12 jun. 2019 |
Financiering
G.B. and S.G. contributed equally to this manuscript. We thank P. J. V. Veldhoven for the support with the MOVPE reactor at the Technical University of Eindhoven. We thank S.R. and B.H. for the help with the electrical transport measurements. This work has been supported by the European Research Council (ERC HELENA 617256), the Dutch Organization for Scientific Research (NWO), the Foundation for Fundamental Research on Matter (FOM), and Microsoft Corporation Station-Q. Solliance and the Dutch province of Noord-Brabant are acknowledged for funding the TEM facility.