High mobility stemless InSb nanowires

Ghada Badawy, Sasa Gazibegovic, Francesco Borsoi, Sebastian Heedt, Chien An Wang, Sebastian Koelling, Marcel A. Verheijen, Leo P. Kouwenhoven, E.P.A.M. Bakkers (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

Uittreksel

High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.

TaalEngels
Pagina's3575-3582
Aantal pagina's8
TijdschriftNano Letters
Volume19
Nummer van het tijdschrift6
DOI's
StatusGepubliceerd - 12 jun 2019

Vingerafdruk

Nanowires
nanowires
stems
Masks
masks
purity
Electron mobility
Growth kinetics
high aspect ratio
electron mobility
Gold
Aspect ratio
Nucleation
retarding
nucleation
gold
catalysts
Crystals
Catalysts
augmentation

Trefwoorden

    Citeer dit

    Badawy, Ghada ; Gazibegovic, Sasa ; Borsoi, Francesco ; Heedt, Sebastian ; Wang, Chien An ; Koelling, Sebastian ; Verheijen, Marcel A. ; Kouwenhoven, Leo P. ; Bakkers, E.P.A.M./ High mobility stemless InSb nanowires. In: Nano Letters. 2019 ; Vol. 19, Nr. 6. blz. 3575-3582
    @article{d9d53d1c4c4b4b6aa6343912f3927fbe,
    title = "High mobility stemless InSb nanowires",
    abstract = "High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.",
    keywords = "electron mobility, growth mechanisms, InSb, metal organic vapor phase epitaxy, Nanowires, stemless nanowires",
    author = "Ghada Badawy and Sasa Gazibegovic and Francesco Borsoi and Sebastian Heedt and Wang, {Chien An} and Sebastian Koelling and Verheijen, {Marcel A.} and Kouwenhoven, {Leo P.} and E.P.A.M. Bakkers",
    year = "2019",
    month = "6",
    day = "12",
    doi = "10.1021/acs.nanolett.9b00545",
    language = "English",
    volume = "19",
    pages = "3575--3582",
    journal = "Nano Letters",
    issn = "1530-6984",
    publisher = "American Chemical Society",
    number = "6",

    }

    High mobility stemless InSb nanowires. / Badawy, Ghada; Gazibegovic, Sasa; Borsoi, Francesco; Heedt, Sebastian; Wang, Chien An; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Bakkers, E.P.A.M. (Corresponding author).

    In: Nano Letters, Vol. 19, Nr. 6, 12.06.2019, blz. 3575-3582.

    Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

    TY - JOUR

    T1 - High mobility stemless InSb nanowires

    AU - Badawy,Ghada

    AU - Gazibegovic,Sasa

    AU - Borsoi,Francesco

    AU - Heedt,Sebastian

    AU - Wang,Chien An

    AU - Koelling,Sebastian

    AU - Verheijen,Marcel A.

    AU - Kouwenhoven,Leo P.

    AU - Bakkers,E.P.A.M.

    PY - 2019/6/12

    Y1 - 2019/6/12

    N2 - High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.

    AB - High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.

    KW - electron mobility

    KW - growth mechanisms

    KW - InSb

    KW - metal organic vapor phase epitaxy

    KW - Nanowires

    KW - stemless nanowires

    UR - http://www.scopus.com/inward/record.url?scp=85067344876&partnerID=8YFLogxK

    U2 - 10.1021/acs.nanolett.9b00545

    DO - 10.1021/acs.nanolett.9b00545

    M3 - Article

    VL - 19

    SP - 3575

    EP - 3582

    JO - Nano Letters

    T2 - Nano Letters

    JF - Nano Letters

    SN - 1530-6984

    IS - 6

    ER -

    Badawy G, Gazibegovic S, Borsoi F, Heedt S, Wang CA, Koelling S et al. High mobility stemless InSb nanowires. Nano Letters. 2019 jun 12;19(6):3575-3582. Beschikbaar vanaf, DOI: 10.1021/acs.nanolett.9b00545