High mobility stemless InSb nanowires

Ghada Badawy, Sasa Gazibegovic, Francesco Borsoi, Sebastian Heedt, Chien An Wang, Sebastian Koelling, Marcel A. Verheijen, Leo P. Kouwenhoven, E.P.A.M. Bakkers (Corresponding author)

Onderzoeksoutput: Bijdrage aan tijdschriftTijdschriftartikelAcademicpeer review

2 Citaten (Scopus)
3 Downloads (Pure)

Samenvatting

High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.

Originele taal-2Engels
Pagina's (van-tot)3575-3582
Aantal pagina's8
TijdschriftNano Letters
Volume19
Nummer van het tijdschrift6
DOI's
StatusGepubliceerd - 12 jun 2019

Vingerafdruk Duik in de onderzoeksthema's van 'High mobility stemless InSb nanowires'. Samen vormen ze een unieke vingerafdruk.

  • Citeer dit