Uittreksel
High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.
| Taal | Engels |
|---|---|
| Pagina's | 3575-3582 |
| Aantal pagina's | 8 |
| Tijdschrift | Nano Letters |
| Volume | 19 |
| Nummer van het tijdschrift | 6 |
| DOI's | |
| Status | Gepubliceerd - 12 jun 2019 |
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High mobility stemless InSb nanowires. / Badawy, Ghada; Gazibegovic, Sasa; Borsoi, Francesco; Heedt, Sebastian; Wang, Chien An; Koelling, Sebastian; Verheijen, Marcel A.; Kouwenhoven, Leo P.; Bakkers, E.P.A.M. (Corresponding author).
In: Nano Letters, Vol. 19, Nr. 6, 12.06.2019, blz. 3575-3582.Onderzoeksoutput: Bijdrage aan tijdschrift › Tijdschriftartikel › Academic › peer review
TY - JOUR
T1 - High mobility stemless InSb nanowires
AU - Badawy,Ghada
AU - Gazibegovic,Sasa
AU - Borsoi,Francesco
AU - Heedt,Sebastian
AU - Wang,Chien An
AU - Koelling,Sebastian
AU - Verheijen,Marcel A.
AU - Kouwenhoven,Leo P.
AU - Bakkers,E.P.A.M.
PY - 2019/6/12
Y1 - 2019/6/12
N2 - High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.
AB - High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.
KW - electron mobility
KW - growth mechanisms
KW - InSb
KW - metal organic vapor phase epitaxy
KW - Nanowires
KW - stemless nanowires
UR - http://www.scopus.com/inward/record.url?scp=85067344876&partnerID=8YFLogxK
U2 - 10.1021/acs.nanolett.9b00545
DO - 10.1021/acs.nanolett.9b00545
M3 - Article
VL - 19
SP - 3575
EP - 3582
JO - Nano Letters
T2 - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 6
ER -