High-density, low-loss MOS decoupling capacitors integrated in a GSM power amplifier

F. Roozeboom, A. Kemmeren, J. Verhoeven, E. Van Den Heuvel, H. Kretschman, T. Frič

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/CongresprocedureConferentiebijdrageAcademicpeer review

16 Citaten (Scopus)

Samenvatting

High-density MOS capacitors have been fabricated with ∼ 30 nF/mm 2 specific capacitance on highly-doped Si-wafers with arrays of macropores with ∼ 2 μm diameter. Using the Bosch process these pores were dry-etched to depths of ∼ 30 μm or more. The enlarged Si-surface thus obtained serves as a substrate for capacitors fabricated by fully MOS-compatible processing. Wafers were fabricated with a top electrode of poly-Si and Al and 'ONO' (i.e. oxide / nitride / oxide) dielectric stacks showing 7-10 MV/cm electrical breakdown field and leakage < 1 nA/mm2 @ 20 V. These wafers were thinned to 380 μm and sawn into dies, representing 40 nF capacitors. Typically low loss factors such as ESR < 50 mΩ and ESL < 20 pH and resonance frequencies of ∼ 0.1 GHz were found for 40 nF capacitor dies. Next, 40 nF dies were mounted by wire bonding on Al2O 3 or laminate substrate as supply-line decoupling capacitors in complete GSM power amplifier test modules. RF decoupling and transmission were measured and compared to identical test modules with conventional discrete ceramic capacitors. The MOS capacitors showed very efficient decoupling, resulting in superior signal stability as measured in the 0 - 1 GHz range (less noisy, free from oscillations). The new capacitor is very suitable for integrated decoupling purposes, e.g. supply-line decoupling in RF wireless communication and analog and mixed-signal systems.

Originele taal-2Engels
TitelMaterials, Integration and Packaging Issues for High - Frequency Devices
Plaats van productieWarrendale
UitgeverijMaterials Research Society
Pagina's157-162
Aantal pagina's6
Volume783
DOI's
StatusGepubliceerd - 1 dec 2003
Extern gepubliceerdJa
EvenementMaterials, Integration and Packaging Issues for High - Frequency Devices - Boston, MA, Verenigde Staten van Amerika
Duur: 1 dec 20033 dec 2003

Publicatie series

NaamMaterials Research Society Symposium - Proceedings
Volume783
ISSN van geprinte versie0272-9172

Congres

CongresMaterials, Integration and Packaging Issues for High - Frequency Devices
Land/RegioVerenigde Staten van Amerika
StadBoston, MA
Periode1/12/033/12/03

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