High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD

D. Hoogeland; K.B. Jinesh; F. Roozeboom; W.F.A. Besling; W. Keuning; M.C.M. Sanden, van de; W.M.M. Kessels

High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD

D. Hoogeland
, K.B. Jinesh
, F. Roozeboom
, W.F.A. Besling
, W. Keuning
, M.C.M. Sanden, van de
, W.M.M. Kessels

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

2 Downloads (Pure)

Originele taal-2	Engels
Titel	Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29 - July 2008, Bruges, Belgium (Book of Abstracts)
Redacteuren	W.M.M. Kessels, A. Delabie
Plaats van productie	S.n.
Uitgeverij	s.n.
Pagina's	P-35-
Status	Gepubliceerd - 2008

Citeer dit

Hoogeland, D., Jinesh, K. B., Roozeboom, F., Besling, W. F. A., Keuning, W., Sanden, van de, M. C. M., & Kessels, W. M. M. (2008). High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD. In W. M. M. Kessels, & A. Delabie (editors), Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29 - July 2008, Bruges, Belgium (Book of Abstracts) (blz. P-35-). s.n..

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title = "High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD",

author = "D. Hoogeland and K.B. Jinesh and F. Roozeboom and W.F.A. Besling and W. Keuning and \{Sanden, van de\}, M.C.M. and W.M.M. Kessels",

year = "2008",

language = "English",

pages = "P--35--",

editor = "W.M.M. Kessels and A. Delabie",

booktitle = "Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29 - July 2008, Bruges, Belgium (Book of Abstracts)",

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Hoogeland, D, Jinesh, KB, Roozeboom, F, Besling, WFA, Keuning, W, Sanden, van de, MCM & Kessels, WMM 2008, High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD. in WMM Kessels & A Delabie (reds.), Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29 - July 2008, Bruges, Belgium (Book of Abstracts). s.n., S.n., blz. P-35-.

High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD. / Hoogeland, D.; Jinesh, K.B.; Roozeboom, F. et al.
Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29 - July 2008, Bruges, Belgium (Book of Abstracts). reds. / W.M.M. Kessels; A. Delabie. S.n.: s.n., 2008. blz. P-35-.

Onderzoeksoutput: Hoofdstuk in Boek/Rapport/Congresprocedure › Conferentiebijdrage › Academic › peer review

TY - GEN

T1 - High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD

AU - Hoogeland, D.

AU - Jinesh, K.B.

AU - Roozeboom, F.

AU - Besling, W.F.A.

AU - Keuning, W.

AU - Sanden, van de, M.C.M.

AU - Kessels, W.M.M.

PY - 2008

Y1 - 2008

M3 - Conference contribution

SP - P-35-

BT - Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29 - July 2008, Bruges, Belgium (Book of Abstracts)

A2 - Kessels, W.M.M.

A2 - Delabie, A.

PB - s.n.

CY - S.n.

ER -

Hoogeland D, Jinesh KB, Roozeboom F, Besling WFA, Keuning W, Sanden, van de MCM et al. High capacitance density MOS capacitor stacks in 3D silicon using plasma-assisted ALD. In Kessels WMM, Delabie A, redacteurs, Proceedings of the 8th International Conference on Atomic Layer Deposition (ALD 2008), June 29 - July 2008, Bruges, Belgium (Book of Abstracts). S.n.: s.n. 2008. blz. P-35-